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Publikováno v:
2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effec
Publikováno v:
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).
Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode. This can be utilized to put the device in a low saturation mode during conduction in diode direction and to reduce the charge before reverse-recovery. [1]