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Akademický článek

Electric Field-Induced Nano-Assembly Formation: First Evidence of Silicon Superclusters with a Giant Permanent Dipole Moment

Autor: Fatme Jardali, Jacqueline Tran, Frédéric Liège, Ileana Florea, Mohamed E. Leulmi, Holger Vach

Publikováno v: Nanomaterials, Vol 13, Iss 15, p 2169 (2023)

The outstanding properties of silicon nanoparticles have been extensively investigated during the last few decades. Experimental evidence and applications of their theoretically predicted permanent electric dipole moment, however, have only been repo

Externí odkaz: https://doaj.org/article/59adc632751f424a8861043372e0cf27

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High graphene permeability for room temperature silicon deposition: The role of defects

Autor: Fatme Jardali, Holger Vach, Paola Castrucci, Roberto Flammini, Manuela Scarselli, C Lechner, Pascal Pochet, S. Colonna, M. De Crescenzi, F. Ronci, Matteo Salvato, Isabelle Berbezier

Publikováno v: Carbon 158 (2020): 631–641. doi:10.1016/j.carbon.2019.11.035
info:cnr-pdr/source/autori:F.Ronci a S.Colonna a R.Flammini a M.De Crescenzi b M.Scarselli b M.Salvato b I.Berbezier c F.Jardali d C.Lechner d P.Pochet e H.Vach d P.Castrucci b/titolo:High graphene permeability for room temperature silicon deposition: The role of defects/doi:10.1016%2Fj.carbon.2019.11.035/rivista:Carbon/anno:2020/pagina_da:631/pagina_a:641/intervallo_pagine:631–641/volume:158
Carbon
Carbon, Elsevier, 2019, ⟨10.1016/j.carbon.2019.11.035⟩
Carbon, Elsevier, 2020, ⟨10.1016/j.carbon.2019.11.035⟩
Carbon, 2020, ⟨10.1016/j.carbon.2019.11.035⟩

International audience; Graphene (Gr) is known to be an excellent barrier preventing atoms and molecules to diffuse through it. This is due to the carbon atom arrangement in a two-dimensional (2D) honeycomb structure with a very small lattice paramet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9225abbb6bc52256dfd836565d677a1c
https://doi.org/10.1016/j.carbon.2019.11.035

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Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Autor: Zouhour Ben Jabra, Mathieu Abel, Filippo Fabbri, Jean-Noel Aqua, Mathieu Koudia, Adrien Michon, Paola Castrucci, Antoine Ronda, Holger Vach, Maurizio De Crescenzi, Isabelle Berbezier

Publikováno v: ACS nano 16 (2022): 5920–5931. doi:10.1021/acsnano.1c11122
info:cnr-pdr/source/autori:Ben Jabra Z.; Abel M.; Fabbri F.; Aqua J.-N.; Koudia M.; Michon A.; Castrucci P.; Ronda A.; Vach H.; De Crescenzi M.; Berbezier I./titolo:Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene%2F6H-SiC/doi:10.1021%2Facsnano.1c11122/rivista:ACS nano/anno:2022/pagina_da:5920/pagina_a:5931/intervallo_pagine:5920–5931/volume:16
ACS NANO

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c8e3c4f2818b91951df85c518da3a25
http://www.cnr.it/prodotto/i/468664

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Effects of an epitaxial graphene layer for the growth of nickel silicides on a Ni(111) substrate

Autor: Fabio Ronci, Stefano Colonna, Roberto Flammini, Maurizio De Crescenzi, Manuela Scarselli, Matteo Salvato, Isabelle Berbezier, Holger Vach, Paola Castrucci

Publikováno v: Applied Surface Science. 611:155763

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76ed79a229d3c71c51effb8e3ca13314
https://doi.org/10.1016/j.apsusc.2022.155763

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Nanoclusters de silicium hydrogéné avec un moment dipolaire électrique permanent pour l'assemblage contrôlé de nanostructures à base de silicium

Autor: Holger Vach, Tatiana Perrotin, Jean-Charles Vanel, Albert A. Ruth, François Silva, Mohamed E. Leulmi, Yvan Bonnassieux, Fatme Jardali, Bryan P. Keary, Stéphane Mazouffre

Publikováno v: ACS Applied Nano Materials
ACS Applied Nano Materials, American Chemical Society, 2021, ⟨10.1021/acsanm.1c02754⟩

International audience; While silicon nanoclusters have extensively been used for their outstanding properties for many decades, never before their dipole moment has been exploited for any application. Here, we have succeeded in producing hydrogenate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbc837a19add4c8a45e2b3fbbb6d2424
https://hal.archives-ouvertes.fr/hal-03448787/file/VACH_ACS_ANM_Rev.pdf

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Silicene nanosheets intercalated in slightly defective epitaxial graphene on a 4H-SiC(0001) substrate

Autor: Filippo Fabbri, Manuela Scarselli, Naveen Shetty, Sergey Kubatkin, Samuel Lara-Avila, Mathieu Abel, Isabelle Berbezier, Holger Vach, Matteo Salvato, Maurizio De Crescenzi, Paola Castrucci

Publikováno v: Surfaces and Interfaces. 33:102262

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4c6089810b8971d3554694cada80dc2
https://doi.org/10.1016/j.surfin.2022.102262

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First-principles study on the role of silicon point defects on PERC solar cell degradation

Autor: Elisa Tejeda-Zacarias, Holger Vach, Philippe Baranek

Publikováno v: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Jun 2021, Fort Lauderdale, United States. pp.0809-0813, ⟨10.1109/PVSC43889.2021.9518589⟩

International audience; One of the causes of decrease in the performance of silicon-based solar pannels is linked to light and elevated temperature induced degradation (LeTID). Even if experimental evidence shows that different defects in the bulk ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21563956b37e2664f256309b9d85c18d
https://hal.archives-ouvertes.fr/hal-03475970

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Hydrogen-mediated CVD epitaxy of graphene on SiC: implications for microelectronic applications

Autor: Elie Assaf, Antoine Ronda, Zouhour Ben Jabra, Paola Castrucci, Adrien Michon, Maurizio De Crescenzi, Holger Vach, Mathieu Abel, Mathieu Koudia, Isabelle Berbezier

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in micr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d41819287498eea4a2811a1e2cc97bf2
http://hdl.handle.net/2108/275629

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The potentially crucial role of quasi-particle interferences for the growth of silicene on graphite

Autor: Paola Castrucci, Maurizio De Crescenzi, Manuela Scarselli, Fatme Jardali, Isabelle Berbezier, Christoph Lechner, Holger Vach

Publikováno v: Nano Research
Nano Research, Springer, 2020, ⟨10.1007/s12274-020-2858-x⟩
Nano Research, 2020, ⟨10.1007/s12274-020-2858-x⟩

A comprehensive picture of the initial stages of silicene growth on graphite is drawn. Evidence is shown that quasiparticle interferences play a crucial role in the formation of the observed silicene configurations. We propose, on one hand, that the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12a0ee433c7ea214f60375d196e6dc29
https://hal.archives-ouvertes.fr/hal-02893280

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