Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Holger Saare"'
Publikováno v:
The Journal of Physical Chemistry C. 126:7036-7046
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f416c16f3a4c83b8eb78b580f03a71c
https://doi.org/10.1021/acs.jpcc.2c01033
https://doi.org/10.1021/acs.jpcc.2c01033
Publikováno v:
Chemistry of Materials. 31:4793-4804
New approaches for area-selective deposition (ASD) are becoming critical for advanced semiconductor patterning. Atomic layer deposition (ALD) and atomic layer etching (ALE), that is, “inverse ALD”, are considered important for ASD, but to date, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27317488ea5274650c502f5d8dd2f021
https://doi.org/10.1021/acs.chemmater.9b01143
https://doi.org/10.1021/acs.chemmater.9b01143
Publikováno v:
Journal of Applied Physics. 128:105302
A key hallmark of atomic layer deposition (ALD) is that it proceeds via self-limiting reactions. For a good ALD process, long reactant exposure times beyond that required for saturation on planar substrates can be useful, for example, to achieve conf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70eab1515fa73bf9ac105999d1a08eeb
https://doi.org/10.1063/5.0013552
https://doi.org/10.1063/5.0013552