Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Holger Pless"'
Publikováno v:
IEEE Sensors Journal. 6:385-390
We propose a PIN photodiode integrated in a BiCMOS process which combines a quantum efficiency of nearly 100% for red light, fast response times, and a low junction capacitance. Bandwidths of 720 MHz at 660 nm and 683 MHz at 850 nm are achieved for t
Autor:
Eckhard Hennig, Steffen Lange, Hongcheng Xu, Joachim Becker, Christian Lang, Maurits Ortmanns, Hans-Jurgen Tiedkte, Holger Pless
Publikováno v:
ISSCC
Improving communication with implantable systems remains an important topic of research due to the limitations in power dissipation and the simultaneous need for high data rates. Neural recorders generate well above 10Mb/s data [1], which needs to be
Publikováno v:
Proceedings of the 21st IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.04CH37510).
The large junction capacitance of photodiodes with large diameters limits both the bandwidth and the noise behavior of attached transimpedance amplifiers. With the large-area photodiode divided into four sections, the bandwidth of an optical sensor i
Publikováno v:
SPIE Proceedings.
Generally, a high-speed optical sensor consists of a photodiode and a transimpedance amplifier. If a large photosensitive area is demanded, the resulting large junction capacitance of the photodiode limits both the bandwidth and the noise behavior of
Publikováno v:
Scopus-Elsevier
We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications i
Publikováno v:
Scopus-Elsevier
We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625
Publikováno v:
SPIE Proceedings.
Novel monolithic optical receivers in 0.8 micrometers standard MOS technology with NRZ data rates in excess of 531 Mb/s at 850 nm are introduced. At 638 nm the data rates are above 622 Mb/s. The innovative integrated double photodiode allowing this h
Publikováno v:
Electronics Letters. 34:1875
A high-speed low-offset BiCMOS optoelectronic integrated circuit (OEIC) for optical storage systems is described. No process modifications were necessary implementing a so-called double photodiode (DPD). Measurements showed –3 dB frequencies of mor