Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Holger Kapels"'
Publikováno v:
Micromachines, Vol 13, Iss 3, p 347 (2022)
The paper presents the realization and characterization of micro-inductors with core with active cooling capability for future integrated DC/DC converter solutions operating with wide bandgap semiconductors at high temperatures with high power densit
Externí odkaz:
https://doaj.org/article/d49a3899acd444caaa34dd77f39f0e06
Autor:
Simon Fichtner, Georg Schönweger, Frank Dietz, Henning Hanssen, Heiko Züge, Tom-Niklas Kreutzer, Fabian Lofink, Hermann Kohlstedt, Holger Kapels, Michael Mensing
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60296262d7b12470787e7f077cd810aa
https://doi.org/10.1109/edtm55494.2023.10103080
https://doi.org/10.1109/edtm55494.2023.10103080
Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents the development, processing and investigation of micro-inductances on silicon having an inductance of about 150nH and a resistance of 0.66Ω. The core of the inductances, 1mm x 3.4mm x 0.6mm in size, is fabricated on silicon subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2c74dc49d86169f8a43d61ec8cf4416
https://doi.org/10.1109/apec39645.2020.9124474
https://doi.org/10.1109/apec39645.2020.9124474
Publikováno v:
2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).
This paper presents a novel control concept for the bidirectional non-inverting buck-boost converter to achieve extreme high-efficiency power conversion. The duty cycle, duty ratios and time delays of the PWM control signals for the switches are modu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0987d78061e264403cfa52bc017969
https://doi.org/10.1109/epe.2016.7695309
https://doi.org/10.1109/epe.2016.7695309
Autor:
Franz Hirler, Holger Kapels
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
The drift zone of superjunction devices consists of compensated n- and p-columns. The manufacturability of such devices is based on the thorough control of acceptors and donator concentrations. Shrinking the cell pitch to a few micrometers requires c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4d949afdd9f6fc05ec5a81b1bdfae3
https://doi.org/10.1109/ispsd.2009.5158061
https://doi.org/10.1109/ispsd.2009.5158061
Publikováno v:
2006 International Conference on Advanced Semiconductor Devices and Microsystems.
New lateral power MOSFETs employing two different, non-uniform, column-shaped superjunction (SJ) structures are proposed for use in smart power ICs that require voltage ratings up to 600V. Using three-dimensional device simulations, the basic electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d65f64922a50775c1a76bc0a2d7066
https://doi.org/10.1109/asdam.2006.331204
https://doi.org/10.1109/asdam.2006.331204
Autor:
Stefan Sedlmaier, C. Tolksdorf, A. Willmeroth, M. Rub, M. Bar, G. Deml, Holger Kapels, M. Schmitt
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
In this work we present for the first time experimental results and corresponding device simulations for high voltage lateral superjunction MOSFETs. We investigated experimentally various degrees of compensation for the lateral compensation structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b2c6d89be0582245198f61129c79845
https://doi.org/10.1109/ispsd.2006.1666132
https://doi.org/10.1109/ispsd.2006.1666132
Publikováno v:
2006 25th International Conference on Microelectronics.
The inductive switching performance of a smart super-junction (SJ) LDMOS switch is simulated and analysed, together with the reverse recovery properties of its internal diode. The SJ power switch under investigation differs from the conventional one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38fdb2dde2f99326f5f370ce3af41d5b
https://doi.org/10.1109/icmel.2006.1650926
https://doi.org/10.1109/icmel.2006.1650926
Publikováno v:
2005 International Conference On Simulation of Semiconductor Processes and Devices.
A novel 600V super-junction (SJ) power LDMOS device with two different designs of SJ structures has been proposed. The basic SJ structure consists of a number of p-type round pillars buried in an n-type drift layer down to a p-type substrate. Perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae33ec1e445ee6b5c13dd15f092d7d6
https://doi.org/10.1109/sispad.2005.201502
https://doi.org/10.1109/sispad.2005.201502
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
The progress in SOI technologies, especially SIMOX and Silicon Direct Bonding, suggests a new type of structural element which could improve device blocking behavior in various aspects. A novel structure element for realizing high breakdown voltages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b588b4f4d459ae19b0ebb195554716
https://doi.org/10.1109/ispsd.2000.856807
https://doi.org/10.1109/ispsd.2000.856807