Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Holcomb, Mikel B."'
Autor:
Tumusange, Marie Solange, Bhandari, Ghadendra B., Romestan, Zachary, Uprety, Prakash, Subedi, Indra, Romero, Aldo H., Holcomb, Mikel B., Podraza, Nikolas J.
Publikováno v:
In Applied Surface Science 15 October 2024 670
Magnetocaloric properties of an inhomogeneous magnetic system of a 7.6 nm La${}_{0.7}$Sr${}_{0.3}$MnO${}_{3}$ consisting of superparamagnetic (SPM) with blocking temperature ( $T_B$ = 240 K) and ferromagnetic (FM) phases ( $T_C$ = 290 K) is studied b
Externí odkaz:
http://arxiv.org/abs/1907.00125
Akademický článek
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Low-energy collective electronic excitations exhibiting sound-like linear dispersion have been intensively studied both experimentally and theoretically for a long time. However, coherent acoustic plasmon modes appearing in time-domain measurements a
Externí odkaz:
http://arxiv.org/abs/1609.09539
Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photo
Externí odkaz:
http://arxiv.org/abs/1512.06917
Autor:
Wegrowe, Jean-Eric, Friedman, Joseph S., Razeghi, Manijeh, Jaffrès, Henri, Amaro de Faria, A. C., Holcomb, Mikel B., Bhandari, Ghadendra B.
Publikováno v:
Proceedings of SPIE; October 2024, Vol. 13119 Issue: 1 p131190M-131190M-10, 12987821p
Optical second harmonic generation (SHG) has been measured for the first time in reflection from the nanometer-thick films (6 to 40 nm) of the topological insulator Bi2Se3 using 1.51 eV (820 nm) Ti:Sapphire laser photons and revealed a strong depende
Externí odkaz:
http://arxiv.org/abs/1504.05621
Transient reflectivity traces measured for nanometer-sized films of the topological insulator Bi2Se3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort laser pulses of 1.51 eV photon energy. Thes
Externí odkaz:
http://arxiv.org/abs/1504.03739
Transient reflectivity (TR) from thin films (6 - 40 nm thick) of the topological insulator Bi2Se3 reveal ultrafast carrier dynamics, which suggest the existence of both radiative and non-radiative recombination between electrons residing in the upper
Externí odkaz:
http://arxiv.org/abs/1410.6381
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation dynamics
Externí odkaz:
http://arxiv.org/abs/1309.1777