Zobrazeno 1 - 10
of 266
pro vyhledávání: '"Holc, K."'
Autor:
Reusch, Markus, Cherneva, Sabina, Lu, Yuan, Zukauskaite, A., Kirste, L., Holc, K., Datcheva, M., Stoychev, D., Lebedev, V., Ambacher, O.
Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AIN thin films grown using reactive RF magnetron s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::92e7fca07515f7610b93b4cb61dfcdd2
https://publica.fraunhofer.de/handle/publica/252032
https://publica.fraunhofer.de/handle/publica/252032
Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers
Autor:
Yoshikawa, T., Reusch, M., Holc, K., Iankov, D., Zürbig, V., Zukauskaité, A., Nebel, C.E., Ambacher, O., Lebedev, V.
A great potential of the use of aluminum nitride (AlN) to enhance the actuation of nanocrystalline diamond (NCD) microelectromechanical system disk resonators is revealed. A disk resonator with a unimorph (AlN/NCD) structure is fabricated by depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::31d563f305732eaf5660dabb55c5e050
https://publica.fraunhofer.de/handle/publica/244367
https://publica.fraunhofer.de/handle/publica/244367
Autor:
Goßler, C., Bierbrauer, C., Moser, R., Kunzer, M., Holc, K., Pletschen, W., Köhler, K., Wagner, J., Schwaerzle, M., Ruther, P., Paul, O., Neef, J., Keppeler, D., Hoch, G., Moser, T., Schwarz, U.T.
Currently available cochlear implants are based on electrical stimulation of the spiral ganglion neurons. Optical stimulation with arrays of micro-sized light-emitting diodes (µLEDs) promises to increase the number of distinguishable frequencies. He
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::fac1285e28d5705758eb8449d0cf6e29
https://publica.fraunhofer.de/handle/publica/236232
https://publica.fraunhofer.de/handle/publica/236232
The dynamics of self-pulsation in monolithic multi segment GaN-based laser diodes (LDs) with integrated absorber, and operating at 410 nm is investigated. The bias-dependent modal absorption of the devices is determined by high resolution Hakki-Paoli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::47ca68657ce7229c7c1a1bc07b331ace
https://publica.fraunhofer.de/handle/publica/236189
https://publica.fraunhofer.de/handle/publica/236189
Self-Q-switching in GaN-based multisection laser diodes (MS-LDs) is investigated. The influence of the absorption on threshold currents and charge carrier lifetimes in the absorber section are measured and discussed in the context of the band structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::a51b5fef709d04119dc26f07f22862dd
https://publica.fraunhofer.de/handle/publica/232612
https://publica.fraunhofer.de/handle/publica/232612
Autor:
Teisseyre, H., Bockowski, M., Grzegory, I., Kozanecki, A., Damilano, B., Zhydachevskii, Y., Kunzer, M., Holc, K., Schwarz, U.T.
So far, most of the studies on GaN doped with beryllium have mainly concentrated on possible ptype doping. Unfortunately, realization of p-type conductivity in such a way appeared to be very difficult. It seems, however, that bulk crystals doped with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::ff664ed16601ae2e04527f464c5cd3ff
https://publica.fraunhofer.de/handle/publica/232551
https://publica.fraunhofer.de/handle/publica/232551
Autor:
Zuerbig, V., Patz, D., Fries, J., Bichra, M., Pletschen, W., Holc, K., Reusch, M., Nebel, C. E., Sinzinger, S., Ambacher, O., Lebedev, V.
Publikováno v:
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators & Microsystems (TRANSDUCERS); 2015, p2045-2048, 4p
Autor:
Reusch, M., Katus, P., Holc, K., Pletschen, W., Kirste, L., Zuerbig, V., Iankov, D., Reindl, L., Ambacher, O., Lebedev, V.
Publikováno v:
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators & Microsystems (TRANSDUCERS); 2015, p1291-1294, 4p
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