Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Holabird, Kevin S."'
Autor:
Borselli, Matthew G., Eng, Kevin, Ross, Richard S., Hazard, Thomas M., Holabird, Kevin S., Huang, Biqin, Kiselev, Andrey A., Deelman, Peter W., Warren, Leslie D., Milosavljevic, Ivan, Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of individual q
Externí odkaz:
http://arxiv.org/abs/1408.0600
Autor:
Borselli, Matthew G., Eng, Kevin, Croke, Edward T., Maune, Brett M., Huang, Biqin, Ross, Richard S., Kiselev, Andrey A., Deelman, Peter W., Alvarado-Rodriguez, Ivan, Schmitz, Adele E., Sokolich, Marko, Holabird, Kevin S., Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
Appl. Phys. Lett. 99, 063109 (2011)
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm tha
Externí odkaz:
http://arxiv.org/abs/1106.6285
Autor:
Borselli, Matthew G., Ross, Richard S., Kiselev, Andrey A., Croke, Edward T., Holabird, Kevin S., Deelman, Peter W., Warren, Leslie D., Alvarado-Rodriguez, Ivan, Milosavljevic, Ivan, Ku, Fiona C., Wong, Wah S., Schmitz, Adele E., Sokolich, Marko, Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
Appl. Phys. Lett. 98, 123118 (2011)
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-
Externí odkaz:
http://arxiv.org/abs/1012.1363
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Autor:
Croke, Edward T., Schulman, Joel N., Chow, David H., Dunlap, Howard L., Holabird, Kevin S., Warren, Leslie D., Morgan, Matthew A., Weinreb, Sander
High-resolution passive millimeter wave imaging cameras require per pixel detector circuitry that is simple, has high sensitivity, low noise, and low power. Detector diodes that do not require bias or local oscillator input, and have high cutoff freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od________38::06e7b121ac9b91dc4b79e440b5d3e56a
https://resolver.caltech.edu/CaltechAUTHORS:20180925-145741691
https://resolver.caltech.edu/CaltechAUTHORS:20180925-145741691
Autor:
Croke, Edward T., Borselli, Matthew G, Maune, Brett M., Huang, Biqin, Ladd, Thaddeus D., Deelman, Peter W., Holabird, Kevin S., Kiselev, Andrey A., Alvarado-Rodriguez, Ivan, Ross, Richard S., Schmitz, Adele E., Sokolich, Marko, Hazard, Thomas M., Gyure, Mark F., Hunter, Andrew T.
Publikováno v:
ECS Transactions; March 2013, Vol. 50 Issue: 9