Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Hokyung Park"'
Autor:
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 424-428 (2021)
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V char
Externí odkaz:
https://doaj.org/article/519aa93d04494911ab18c5356ffa3035
Autor:
Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Min-Jung Jin, Wenhao Zhou, Hyewon Shim, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8405c8d26cca958a0be8c94c4c1564
https://doi.org/10.1109/irps48203.2023.10118344
https://doi.org/10.1109/irps48203.2023.10118344
Autor:
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myung Soo Yeo, Shinyoung Chung, Jon Haefner
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa03ccd80186c6ca8d27ff32ad8f70af
https://doi.org/10.1109/irps48203.2023.10117774
https://doi.org/10.1109/irps48203.2023.10117774
Autor:
Byoung Hun Lee, Tae Jin Yoo, Ho-In Lee, Soo Cheol Kang, Young Gon Lee, Hyeon Jun Hwang, Hokyung Park, Sunwoo Heo
Publikováno v:
IEEE Journal of the Electron Devices Society. 9:424-428
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fb22f8a0e6a9c6ba2a8703bfc84e2ae
https://doi.org/10.1109/jeds.2021.3073220
https://doi.org/10.1109/jeds.2021.3073220
Autor:
Mihaela Popovici, Andrea Padovani, Attilio Belmonte, Ben Kaczer, Luca Larcher, Young Gon Lee, Ilya Shlyakhov, Laura Nyns, Valeri Afanas'ev, Dimitri Linten, Milan Pešić, Hokyung Park
Publikováno v:
IEEE Transactions on Electron Devices. 66:1892-1898
We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current ( ${J}$ – ${V}$ ), capacitance ( ${C}$ – ${V}$ ), and conductance ( ${G}$ – ${V}$ ) measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a57ce9d6057fa3d8b8e9b169a038aa
https://doi.org/10.1109/ted.2019.2900030
https://doi.org/10.1109/ted.2019.2900030
Autor:
Jinwoo Noh, Byoung Hun Lee, Soo Cheol Kang, Young Gon Lee, Sunwoo Heo, Yonghun Kim, Seokkiu Lee, Hokyung Park, Seung Mo Kim
Publikováno v:
IEEE Electron Device Letters. 38:521-524
The capacitor dielectric dispersion characteristic has become an important design parameter, because the effective dielectric constant of a high-k dielectric significantly changes at high frequencies. However, current methods for capacitance measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e640e356c16529b3a4161376c4562c
https://doi.org/10.1109/led.2017.2671367
https://doi.org/10.1109/led.2017.2671367
Autor:
Jiacheng Huang, Hokyung Park, Gennadi Bersuker, Dmitry Veksler, Chadwin D. Young, W. Taylor, Michael Shur, Sergey L. Rumyantsev
Publikováno v:
Microelectronic Engineering. 88:1255-1258
Low frequency noise (LFN) characterization was performed on the HfSiON gate stacks fabricated with the SiON interfacial layers (ILs) and a La cap layer. The LFN data identified N and La related defects located in the IL/HK region.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e86b1b0b65ba294ec467dc26caaf8bf
https://doi.org/10.1016/j.mee.2011.03.109
https://doi.org/10.1016/j.mee.2011.03.109
Publikováno v:
Microelectronic Engineering. 84:1934-1937
The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO"2 nMOSFET. Pulse based measurements (Pulsed Id-Vg and ''Pulse on the fly'') are performed to characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::837edfe56ab7d2c5b640ebe7e0371d1e
https://doi.org/10.1016/j.mee.2007.04.025
https://doi.org/10.1016/j.mee.2007.04.025
Publikováno v:
Microelectronic Engineering. 84:2205-2208
In this paper, two different materials are studied for silicon band edge work function. Sc metal gate with thin interface TaN"x layer is investigated for n-channel metal-oxide semiconductor (NMOS) metal gate application. The control of TaN"x layer th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d382f0010eaee64a9bb2a17ac44e28bd
https://doi.org/10.1016/j.mee.2007.04.028
https://doi.org/10.1016/j.mee.2007.04.028
Autor:
Moonjae Kwon, Hokyung Park, Minseok Jo, Hyejung Choi, Seungjae Jung, Man Chang, Musarrat Hasan, Sangmoo Choi, Hyunsang Hwang
Publikováno v:
Microelectronic Engineering. 84:2002-2005
Effects of high-pressure wet vapor annealing (HPWA) on the memory properties of Metal/Alumina/Nitride/Oxide/Silicon (MANOS)-type flash memory devices are studied. The Oxide/Nitride/Alumina (ONA) stacks were annealed in a high-pressure wet vapor ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2a43a23e50400bb5cf1d7e58d891c9
https://doi.org/10.1016/j.mee.2007.04.034
https://doi.org/10.1016/j.mee.2007.04.034