Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hokyong Park"'
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b32066cd90394d8606afcd8ef9a9276
https://doi.org/10.7567/ssdm.2005.b-2-5
https://doi.org/10.7567/ssdm.2005.b-2-5
Publikováno v:
Electrochemical and Solid-State Letters. 11:H124
A dual-metal-gate stack with an interfacial layer of aluminum nitride and a top layer of iridium was investigated. By controlling the thickness and composition of aluminum nitride, we can effectively control the work function of the metal gate stack.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1fcb0d1ad4c5f7b359c7bc76cc7989a
https://doi.org/10.1149/1.2862791
https://doi.org/10.1149/1.2862791