Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hojoon Yi"'
Autor:
Hojoon Yi, Jaeuk Bahng, Sehwan Park, Dang Xuan Dang, Wonkil Sakong, Seungsu Kang, Byung-wook Ahn, Jungwon Kim, Ki Kang Kim, Jong Tae Lim, Seong Chu Lim
Publikováno v:
Materials, Vol 14, Iss 16, p 4477 (2021)
The 1D wire TaS3 exhibits metallic behavior at room temperature but changes into a semiconductor below the Peierls transition temperature (Tp), near 210 K. Using the 3ω method, we measured the thermal conductivity κ of TaS3 as a function of tempera
Externí odkaz:
https://doaj.org/article/29b2bb63c36c43c5b20f25da05a26a58
Autor:
Wonkil Sakong, Hamza Zad Gul, Byungwook Ahn, Suar Oh, Giheon Kim, Eunji Sim, Jaeuk Bahng, Hojoon Yi, Minjeong Kim, Minhee Yun, Seong Chu Lim
Publikováno v:
Nano letters. 22(13)
The two different light-matter interactions between visible and infrared light are not switchable because control mechanisms have not been elucidated so far, which restricts the effective spectral range in light-sensing devices. In this study, modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18d534292bbbb9868a72191ccd96e6c7
https://pubmed.ncbi.nlm.nih.gov/35729739
https://pubmed.ncbi.nlm.nih.gov/35729739
Autor:
Sangho Park, Jorge Torres, Jung-Kun Lee, Yulin Liu, Seth So, Seong Chu Lim, Hojoon Yi, Minhee Yun
Publikováno v:
ACS Applied Materials & Interfaces. 12:48890-48898
Interfacial effects on single-layer graphene (SLG) or multilayer graphene (MLG) properties greatly affect device performance. Thus, the effect of the interface on the temperature coefficient of resistance (TCR) on SLG and MLG due to surface-deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81e5b00c7dc61152d97c41e96999f0d2
https://doi.org/10.1021/acsami.0c09621
https://doi.org/10.1021/acsami.0c09621
Autor:
Seungsu Kang, Hamza Zad Gul, Giheon Kim, Young Chul Choi, Ji Yeon Kim, Jungwon Kim, Won Seok Kim, Seong Chu Lim, Hojoon Yi, Eunji Sim, Hyunjin Ji
Publikováno v:
Carbon. 162:339-345
We investigate the thermal and electrical conductivities of Cu-coated carbon fiber (Cu-CF), which is designed to reduce the weight of metal wires. The electrical and thermal properties of Cu-CF are assessed using the 3 ω method. This material is for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02985e7b91212a858a9e4e37f54e499c
https://doi.org/10.1016/j.carbon.2020.02.062
https://doi.org/10.1016/j.carbon.2020.02.062
Autor:
Ki Kang Kim, Wonkil Sakong, Jungwon Kim, Seong Chu Lim, Sehwan Park, Seungsu Kang, Hojoon Yi, Jong Tae Lim, Dang Xuan Dang, Byung-Wook Ahn, Jaeuk Bahng
Publikováno v:
Materials, Vol 14, Iss 4477, p 4477 (2021)
Materials
Volume 14
Issue 16
Materials
Volume 14
Issue 16
The 1D wire TaS3 exhibits metallic behavior at room temperature but changes into a semiconductor below the Peierls transition temperature (Tp), near 210 K. Using the 3ω method, we measured the thermal conductivity κ of TaS3 as a function of tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a43593302f0f8a0cfc27999165cc526
https://www.mdpi.com/1996-1944/14/16/4477
https://www.mdpi.com/1996-1944/14/16/4477
Autor:
Seong Chu Lim, Min-Kyu Joo, Sakong Wonkil, Huong Thi Thanh Nguyen, Hyunjin Ji, Hojoon Yi, Hyun You Kim
Publikováno v:
IEEE Electron Device Letters. 40:1626-1629
We investigated device properties before and after heat treatment for a hetero-stacked two-dimensional field-effect transistor (FET). In dual-gated monolayer MoS2 FET using a top h-BN layer and bottom SiO2 substrate, careful but harsh heat treatment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c14ad7f537053cf3894094c5871a5f
https://doi.org/10.1109/led.2019.2936233
https://doi.org/10.1109/led.2019.2936233
Autor:
Hamza Zad Gul, Seong Chu Lim, Wonkil Sakong, Jinbao Jiang, Dongseok Suh, Mohan Kumar Ghimire, Min-Kyu Joo, Hojoon Yi, Hyunjin Ji, Gwanmu Lee, Yoojoo Yun, Joonggyu Kim
Publikováno v:
ACS Applied Materials & Interfaces. 11:29022-29028
The transport behaviors of MoS2 field-effect transistors (FETs) with various channel thicknesses are studied. In a 12 nm thick MoS2 FET, a typical switching behavior is observed with an Ion/Ioff ra...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc40522ea835d0d889cf190ac38a4287
https://doi.org/10.1021/acsami.9b06715
https://doi.org/10.1021/acsami.9b06715
Autor:
Hamza Zad Gul, Jorge Torres, Hojoon Yi, Minhee Yun, Seong Chu Lim, Hyunjin Ji, Jung Hyun Yoon, Mohan Kumar Ghimire, Ha Ryong Hwang, Wonkil Sakong, Young Hee Lee
Publikováno v:
ACS Applied Materials & Interfaces. 11:19565-19571
Both photothermal and photovoltaic infrared (IR) detectors employ sensing materials that have an optical band gap. Different from these conventional materials, graphene has a conical band structure that imposes zero band gap. In this study, using the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::135b70a47e58df521593c5c49cf7479f
https://doi.org/10.1021/acsami.9b00977
https://doi.org/10.1021/acsami.9b00977
Publikováno v:
ACS Applied Materials & Interfaces. 11:10068-10073
Imperfections in the crystal lattice, such as defects, grain boundaries, or dislocations, can significantly affect the optical and electrical transport properties of materials. In this study, we report the effect of mid gap trap states on photocurren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16611dca2265f88d4b3ed366f78c2e43
https://doi.org/10.1021/acsami.9b00050
https://doi.org/10.1021/acsami.9b00050
Autor:
Hyunjin, Ji, Byoung Hee, Moon, Hojoon, Yi, Suar, Oh, Wonkil, Sakong, Nguyen Thi Thanh, Huong, Seong Chu, Lim
Publikováno v:
Nanotechnology. 31(25)
In field-effect transistors (FETs), when the thickness of the semiconducting transition metal dichalcogenides (TMDs) channel exceeds the maximum depletion depth, the entire region cannot be completely controlled by a single-gate electric field. The l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a106c5488c739f794816888b1fe69241
https://pubmed.ncbi.nlm.nih.gov/32163941
https://pubmed.ncbi.nlm.nih.gov/32163941