Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hojoon Ryu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 167-173 (2023)
High temperature operation of enhancement-mode (E-mode) and depletion-mode (D-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) was demonstrated. By using the circular device structure, off-state current was
Externí odkaz:
https://doaj.org/article/d738a1ee438d40aaa1efdeb0815b5182
Publikováno v:
IEEE Transactions on Electron Devices. 68:1334-1339
Unlike transitional semiconductors, graphene has zero bandgap and symmetric electron/hole transport, which leads to unique V-shaped transfer characteristics. Using this property, we design and demonstrate a new type of comparator, which can calculate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51aa0baa9e40dfe0143d09a256d8c0e9
https://doi.org/10.1109/ted.2021.3049757
https://doi.org/10.1109/ted.2021.3049757
Publikováno v:
Applied Physics Letters. 122:112103
AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) were demonstrated to operate at temperatures of up to 600 °C. High-quality multilayer gate dielectrics (Al2O3/SiO2/SiON) were developed to enhance the thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cd8c0ff3edaf9fb2b5d6c943f71188
https://doi.org/10.1063/5.0134475
https://doi.org/10.1063/5.0134475
Publikováno v:
ACS Applied Materials & Interfaces. 12:51820-51826
Van der Waals (vdW) ferroelectric insulator CuInP2S6 (CIPS) has attracted intense research interest due to its unique ferroelectric and piezoelectric properties. In this paper, we systematically investigate the temperature and frequency dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d9e1963893a153beb361b7b9b219d13
https://doi.org/10.1021/acsami.0c13799
https://doi.org/10.1021/acsami.0c13799
Publikováno v:
IEEE Transactions on Electron Devices. 66:2359-2364
In this paper, we explore new metal electrodes for ferroelectric capacitors based on Al-doped HfO2. We find that Ti/Pd, Ti/Au, and W top electrodes can induce much higher remanent polarization as compared to the traditional TiN top electrode. The end
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645e2b7e2577ab3f06f49c47205320c2
https://doi.org/10.1109/ted.2019.2907070
https://doi.org/10.1109/ted.2019.2907070
Publikováno v:
ACS applied materialsinterfaces. 12(46)
Van der Waals (vdW) ferroelectric insulator CuInP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5843aaab538fc7be90b17ef6c6c88e16
https://pubmed.ncbi.nlm.nih.gov/33152243
https://pubmed.ncbi.nlm.nih.gov/33152243
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-8 (2019)
Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications, including non-volatile memories and neurosynaptic computing. One of the key challenges in FTJs is the balance betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5090892a21ed3b6392ab0b92d5279fd
https://doi.org/10.1038/s41598-019-56816-x
https://doi.org/10.1038/s41598-019-56816-x
Publikováno v:
DRC
Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are promising for many emerging applications including non-volatile memories and neurosynaptic computing. Traditional FTJs were mainly based on perovskites, such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22af21bf0416233234309977dcbfb89b
https://doi.org/10.1109/drc46940.2019.9046340
https://doi.org/10.1109/drc46940.2019.9046340
Publikováno v:
Applied Physics Letters. 117:080503
Introducing ferroelectricity to two-dimensional van der Waals (vdW) materials such as graphene, transition metal dichalcogenides, and black phosphorous presents a promising route for developing high-speed and low-power nanoelectronics. This Perspecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965a2c3af327b04eba8dda5989af4fc6
https://doi.org/10.1063/5.0019555
https://doi.org/10.1063/5.0019555
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we review our research on nanoscale electronic and optoelectronic devices based on two-dimensional (2D) materials and ferroelectric materials. Our study reveals that the current transport in graphene is highly influenced by the number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcc789c44ef3dc210ddb5cdd5ade0a6a
https://doi.org/10.1109/icsict.2018.8564988
https://doi.org/10.1109/icsict.2018.8564988