Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Hojeong Ryu"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an un
Externí odkaz:
https://doaj.org/article/bcc234de557b4533a6e87fde26960ef6
Publikováno v:
Metals, Vol 11, Iss 12, p 1885 (2021)
This work characterizes resistive switching and neuromorphic simulation of Pt/HfO2/TaN stack as an artificial synaptic device. A stable bipolar resistive switching operation is performed by repetitive DC sweep cycles. Furthermore, endurance (DC 100 c
Externí odkaz:
https://doaj.org/article/301b80abfde7477d8433627911681b30
Publikováno v:
Metals, Vol 11, Iss 10, p 1531 (2021)
In this work, we demonstrate the threshold switching and bipolar resistive switching with non-volatile property of TiN/TaOx/indium tin oxide (ITO) memristor device. The intrinsic switching of TaOx is preferred when a positive bias is applied to the T
Externí odkaz:
https://doaj.org/article/196514e758ac4cea9c9fb0c119678982
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Metals, Vol 11, Iss 9, p 1350 (2021)
In this work, we investigate the resistive switching behaviors of HfO2-based resistive random-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si sta
Externí odkaz:
https://doaj.org/article/fb837e2bd4a14b94a74347def44f8fae
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Metals, Vol 11, Iss 8, p 1199 (2021)
This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verifi
Externí odkaz:
https://doaj.org/article/33f36a53af2148aab1d66f5e5b38155c
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Metals, Vol 11, Iss 8, p 1207 (2021)
In this work, we study the threshold switching and short-term memory plasticity of a Pt/HfO2/TaOx/TiN resistive memory device for a neuromorphic system. First, we verify the thickness and elemental characterization of the device stack through transmi
Externí odkaz:
https://doaj.org/article/0873786499e44ca3a8cf835ebb0e180b
Publikováno v:
Metals, Vol 11, Iss 5, p 772 (2021)
This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was
Externí odkaz:
https://doaj.org/article/997c25ae15384333a1dfe349ee0c3b55
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Metals, Vol 11, Iss 4, p 653 (2021)
In this work, we examined the irregular resistive switching behaviors of a complementary metal–oxide–semiconductor (CMOS)-compatible Cu/Al2O3/Si resistor device. X-ray photoelectron spectroscopy (XPS) analysis confirmed the chemical and material
Externí odkaz:
https://doaj.org/article/bfa804488aa54e74bc62961e6155bf9e
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Metals, Vol 11, Iss 3, p 440 (2021)
In this work, resistive switching and synaptic behaviors of a TiO2/Al2O3 bilayer device were studied. The deposition of Pt/Ti/TiO2/Al2O3/TiN stack was confirmed by transmission electron microscopy (TEM) and energy X-ray dispersive spectroscopy (EDS).
Externí odkaz:
https://doaj.org/article/1c5cdccc289046a494a26957f5b5ca3d
Autor:
Hojeong Ryu, Sungjun Kim
Publikováno v:
Nanomaterials, Vol 10, Iss 12, p 2462 (2020)
In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO2/Si3N4/SiO2) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly invest
Externí odkaz:
https://doaj.org/article/3b0ea6267cda48a399344412960cb1e9