Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hoin Yu"'
A Mobility Model for Random Discrete Dopants and Application to the Current Drivability of DRAM Cell
Publikováno v:
IEEE Transactions on Electron Devices. 64:4246-4251
A new impurity mobility model suitable for the TCAD simulation of the random discrete dopant (RDD) has been proposed. The proposed model has been applied to the DRAM cell transistor of the 20-nm technology generation. The RDD effect in the drain regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0ceef639b91356dbada75f759f289f
https://doi.org/10.1109/ted.2017.2741968
https://doi.org/10.1109/ted.2017.2741968
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
A new effective field dependent mobility model for the TCAD simulation considering the random discrete dopants is presented. When the devices with the random discrete dopants are simulated, the conventional mobility models designed for the continuous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec14ee95ba98ffa58b9925ff6710f092
https://doi.org/10.23919/sispad.2017.8085309
https://doi.org/10.23919/sispad.2017.8085309