Zobrazeno 1 - 10
of 178
pro vyhledávání: '"Hoi Wai Choi"'
Publikováno v:
Optics letters. 47(24)
This paper demonstrates monolithic multi-wavelength lasing through fabrication of multi-sized microdisks on a green-emitting thin film sample. The different dimensions of the microdisks incur different extent of strain relaxation, thus changing the e
Publikováno v:
Journal of Lightwave Technology. 39:6269-6275
The bandgap energies of the group III-V semiconductor gallium nitride (GaN) and its alloys cover emission wavelengths ranging from the ultraviolet to the visible. Concurrently, GaN has enabled high performance transistors to provide attractive soluti
Autor:
Hoi Wai Choi, Wai Yuen Fu
Publikováno v:
ACS Applied Nano Materials. 4:666-672
While spectral blue-shifting caused by nanostructuring of InGaN/GaN quantum wells has been widely reported for altering the emission color of light-emitting diodes, the same cannot be said for spec...
Autor:
Albert Lee, K. H. Li, Weijian Jin, Hoi Wai Choi, Yuk Fai Cheung, Wai Yuen Fu, Siew-Chong Tan, Shu Yuen Hui
Publikováno v:
IEEE Transactions on Industrial Electronics. 67:5154-5160
In this paper, a solution toward realizing color chromaticity stabilized InGaN red, green, and blue (RGB) light-emitting diode (LED) is proposed and demonstrated. The InGaN/GaN multiple quantum wells (play a key role in light emission from the LEDs a
Autor:
Hoi Wai Choi, Xiao Ma
Publikováno v:
Journal of Vacuum Science & Technology B. 41:012207
The observation of ground loop signals in nonelectrically isolated GaN monolithic systems has prompted an investigation on its origins. The study is carried out with devices comprising monolithic light-emitting diodes (LED) and photodetectors (PD) th
Autor:
Benjamin Damilano, Jean-Yves Duboz, W. Y. Fu, Ph. Boucaud, Hyonju Kim-Chauveau, H. Zi, P. de Mierry, Hoi Wai Choi, Farsane Tabataba-Vakili, Fabrice Semond, Eric Frayssinet
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2021, 29 (14), pp.21280. ⟨10.1364/OE.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29, ⟨10.1364/oe.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29 (14), pp.21280. ⟨10.1364/OE.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29, ⟨10.1364/oe.427727⟩
Microdisks fabricated with III-nitride materials grown on GaN substrates are demonstrated, taking advantage of the high material quality of homoepitaxial films and advanced micro-fabrication processes. The epitaxial structure consists of InGaN/GaN mu
Publikováno v:
IEEE Transactions on Industrial Electronics. 66:7426-7432
To overcome light output degradations and fluctuations of intensities from light-emitting diodes (LEDs) over time, the monolithic integration of InGaN LEDs and photodetectors (PDs) is demonstrated in this paper. The InGaN/GaN multiquantum wells (MQWs
Publikováno v:
ACS Applied Electronic Materials. 1:1112-1119
Flexible micro-/nanoscale photonics has shown great promise in a wide range of applications, especially those that cannot be addressed by traditional photonics based on rigid materials and structur...
Autor:
Hoi Wai Choi, Wai Yuen Fu
Publikováno v:
Journal of Applied Physics. 132:060903
Lift-off processes have been developed as the enabling technology to free the epitaxial III-nitride thin film from a conventional growth substrate such as sapphire and silicon in order to realize a variety of novel device designs and structures not o
Autor:
Hui Zi, Wai Yuen Fu, Yuk Fai Cheung, Benjamin Damilano, Eric Frayssinet, Blandine Alloing, Jean-Yves Duboz, Philippe Boucaud, Fabrice Semond, Hoi Wai Choi
Publikováno v:
Journal of Physics D: Applied Physics. 55:355107
The lasing characteristics of optically-pumped GaN microdisks of different configurations, including microdisks with undercuts, microdisks with cladding layers and thin-film microdisks are investigated in this paper. The microdisks, fabricated from a