Zobrazeno 1 - 10
of 1 124
pro vyhledávání: '"Hoi‐Sing Kwok"'
Autor:
Guijun Li, Man-Chun Tseng, Yu Chen, Fion Sze-Yan Yeung, Hangyu He, Yuechu Cheng, Junhu Cai, Enguo Chen, Hoi-Sing Kwok
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-21 (2024)
Abstract The growing focus on enhancing color quality in liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) has spurred significant advancements in color-conversion materials. Furthermore, color conversion is also important for
Externí odkaz:
https://doaj.org/article/0017107eccab473da06baa73cfa4db55
Autor:
Yayi Chen, Xingji Liu, Dengyun Lei, Yuan Liu, Rongsheng Chen, Yao Ni, Hoi-Sing Kwok, Wei Zhong
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 275-280 (2024)
The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these device
Externí odkaz:
https://doaj.org/article/8d56377d2d404c46b858bcfbcd875aa8
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 10, Pp n/a-n/a (2023)
Abstract InGaZnO (IGZO) thin‐film transistors (TFTs) have gained widespread use in active matrix (AM) displays due to their decent field‐effect mobility and low off current. However, the wide bandgap of IGZO limits their application in visible li
Externí odkaz:
https://doaj.org/article/f9e23cdb90334fc393e8ff97c5b53a5e
Autor:
Yiyang Gao, Jacob Y. Ho, Shu-Tuen Tang, Wanlong Zhang, Man-chun Tseng, Olena Vashchenko, Valerii Vashchenko, Fion Yeung, Hoi-Sing Kwok
Publikováno v:
AIP Advances, Vol 13, Iss 5, Pp 055006-055006-7 (2023)
Azo dyes are valuable functional materials due to their sensitive response to and effective modulation of polarized light. It is essential to find out not only the optical anisotropy but also the complex refractive index of azo dye materials for phot
Externí odkaz:
https://doaj.org/article/2df805146ac841359e82d3ea24a89a63
Autor:
Muhammad Umair Khan, Jungmin Kim, Mahesh Y. Chougale, Chaudhry Muhammad Furqan, Qazi Muhammad Saqib, Rayyan Ali Shaukat, Nobuhiko P. Kobayashi, Baker Mohammad, Jinho Bae, Hoi-Sing Kwok
Publikováno v:
Microsystems & Nanoengineering, Vol 8, Iss 1, Pp 1-9 (2022)
Externí odkaz:
https://doaj.org/article/0427c7ec66b74c46aa8fc15b99d92293
The Birefringence and Extinction Coefficient of Ferroelectric Liquid Crystals in the Terahertz Range
Publikováno v:
Photonics, Vol 10, Iss 12, p 1368 (2023)
In this paper, the refractive index and extinction coefficient of ferroelectric liquid crystals have been examined by the terahertz time-domain spectroscopy system. Two modes of ferroelectric liquid crystal materials, deformed helix ferroelectric liq
Externí odkaz:
https://doaj.org/article/29d2155d56ff4a42a4ccb9da5e824ec2
Publikováno v:
SusMat, Vol 1, Iss 4, Pp 593-602 (2021)
Abstract Fiber‐optic sensors have been developed to monitor the structural vibration with advantages of high sensitivity, immunity to electromagnetic interference (EMI), flexibility, and capability to achieve multiplexed or distributed sensing. How
Externí odkaz:
https://doaj.org/article/941f18138ee24eb3b90b7beea468f3a8
Autor:
Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to an
Externí odkaz:
https://doaj.org/article/3a822eb974634b5f871de4a7c3039c32
Autor:
Jianfeng Zhang, Le Jiang, Jincheng Huang, Xi Luo, Zhongming Luo, Dingjian Zhou, Hoi‐Sing Kwok, Ping Xu, Guijun Li
Publikováno v:
Nano Select, Vol 2, Iss 3, Pp 624-631 (2021)
Abstract In recent years, impressive progress has been made in developing high‐performance perovskite light‐emitting diodes (PeLEDs) with efficiencies comparable to those of traditional organic light‐emitting diodes (OLEDs). It is convinced tha
Externí odkaz:
https://doaj.org/article/790313f7a40441bbadf1dbbcb2623ec9
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 435-441 (2020)
Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences
Externí odkaz:
https://doaj.org/article/214d84bbc8aa4595a770935d6098a60d