Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hoi, Wong Man"'
Autor:
Higashiwaki, Masataka, Hoi Wong, Man, Kamimura, Takafumi, Nakata, Yoshiaki, Chia-Hung, Lin, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Singh, Manikant, Pomeroy, James, Uren, Michael, Casbon, Michael, Tasker, Paul, Goto, Ken, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Kuball, Martin, Murakami, Hisashi, Kumagai, Yoshinao
Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to excellent material properties based on an extremely large bandgap of over 4.5 eV and the commercial availability of native wafers produced from melt-gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e30fc5776b0f5c1e1d1ab8fc1f22c268
https://repo.qst.go.jp/records/75595
https://repo.qst.go.jp/records/75595
Autor:
Hoi Wong, Man, Nakata, Yoshiaki, Chia-Hung, Lin, Sasaki, Kohei, Morikawa, Yoji, Goto, Ken, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
The pursuit of Ga2O3 as an ultra-wide-bandgap (4.5–4.9 eV) semiconductor for next-generation power-switching and harsh-environment electronics has catalyzed the rapid development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::73284378c69a5c9ae667b9fbae96a683
https://repo.qst.go.jp/records/74800
https://repo.qst.go.jp/records/74800
Autor:
Hoi, Wong Man, Nakata, Yoshiaki, Lin, Chia-Hung, Sasaki, Kohei, Morikawa, Yoji, Goto, Ken, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion implantation doping for the channel and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::958ad5be4b98e9f0020e709592c59e9c
https://repo.qst.go.jp/records/73331
https://repo.qst.go.jp/records/73331
Autor:
Hoi, Wong Man, Nakata, Yoshiaki, Lin, Chia-Hung, Sasaki, Kohei, Morikawa, Yoji, Goto, Ken, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 201
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::e0ebb5a19d7979e51586384ff90b0247
https://repo.qst.go.jp/records/73330
https://repo.qst.go.jp/records/73330
Autor:
Higashiwaki, Masataka, Hoi, Wong Man, Konishi, Keita, Nakata, Yoshiaki, Kamimura, Takafumi, Sasaki, Kohei, Goto, Ken, Murakami, Hisashi, Kumagai, Yoshinao, Kuramata, Akito
Recently, gallium oxide (Ga2O3) has attracted much attention as a candidate for future power and harsh environment electronics due to its extremely large bandgap of 4.5 eV and the availability of economical melt-grown native substrates. In this talk,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::fc52e2e6cec2212a85f63a4a9a302139
https://repo.qst.go.jp/records/73316
https://repo.qst.go.jp/records/73316
Autor:
Hoi, Wong Man, Nakata, Y., Lin, C.H., Morikawa, Y., Sasaki, K., Goto, K., Murakami, H., Kumagai, Y., Kuramata, A., Yamakoshi, S.
β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion (Si+) implantation doping for the chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::072ee5a180b08788ac4555df996345a3
https://repo.qst.go.jp/records/73315
https://repo.qst.go.jp/records/73315
The high-voltage and high-temperature capabilities of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to find applications in extreme radiation environments. This paper reports the first investigation into the effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::283fe6958f0763c17486ca8464d49613
https://repo.qst.go.jp/records/66659
https://repo.qst.go.jp/records/66659
Gallium oxide (Ga2O3) is attractive for power devices owing to its wide bandgap of 4.5 eV and the availability of economical device-quality native substrates. Recent research on Ga2O3 Schottky barrier diodes and field-effect transistors (FETs) has se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::2a5859d79387e4e4d3019a3eca010081
https://repo.qst.go.jp/records/66669
https://repo.qst.go.jp/records/66669
Publikováno v:
APPLIED PHYSICS LETTERS. 112(023503):023503-023503-5
The effects of ionizing radiation on b-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::16cda932f7a260dee66aadd35590e5ba
https://repo.qst.go.jp/records/48905
https://repo.qst.go.jp/records/48905
Autor:
Kamimura, Takafumi, Sasaki, Kohei, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu, Higashiwaki, Masataka
Publikováno v:
Applied Physics Letters; 5/12/2014, Vol. 104 Issue 19, p1-5, 5p, 2 Diagrams, 4 Graphs