Výsledky vyhledávání

Akademický článek

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Autor: Salm, C., Hof, A.J., Kuper, F.G., Schmitz, J.

Publikováno v: In Microelectronics Reliability 2006 46(9):1617-1622

Zobrazit plný text záznamu

Akademický článek

Copper chemical mechanical polishing using a slurry-free technique

Autor: Nguyen, V.H. ^*, Hof, A.J., van Kranenburg, H., Woerlee, P.H., Weimar, F.

Publikováno v: In Microelectronic Engineering 2001 55(1):305-312

Zobrazit plný text záznamu

Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

Autor: Kolhatkar, J.S., Hoekstra, E., Hof, A.J., Salm, C., Wallinga, H., Schmitz, J.

Publikováno v: Proceedings SAFE & ProRISC 2004, 700-703
STARTPAGE=700;ENDPAGE=703;TITLE=Proceedings SAFE & ProRISC 2004

Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::8574b1d40b149b0c64ce50d0f0db7fed
https://research.utwente.nl/en/publications/investigating-hotcarrier-degradation-in-mosfets-using-constant-and-switched-biased-lowfrequency-noise-measurements(9eca4f9d-90c0-4712-b8d0-fc6b840fba87).html

Zobrazit plný text záznamu

On Oxidation Kinetics and Electrical Quality of Gate Oxide Grown in H2O or D2O Ambient

Autor: Hof, A.J., Kovalgin, Alexeij Y., Woerlee, P.H., Schmitz, Jurriaan

Publikováno v: Proceedings of Semiconductor Advances for Future Electronics SAFE 2003, 743-747
STARTPAGE=743;ENDPAGE=747;TITLE=Proceedings of Semiconductor Advances for Future Electronics SAFE 2003
ISSUE=6;STARTPAGE=743;ENDPAGE=747;TITLE=6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. This work presents a wide range of growth rate data of H2O and D2O gate oxides in an ultra-diluted ambient. A consid

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::90a5cf4cfb2085980d258911e46771f0
https://research.utwente.nl/en/publications/on-oxidation-kinetics-and-electrical-quality-of-gate-oxide-grown-in-h2o-or-d2o-ambient(a105835b-f5ff-4f87-8c8f-2c9424460df3).html

Zobrazit plný text záznamu

Comparison of H2O and D2O Oxidation Kinetics of Silicon

Autor: Hof, A.J., Kovalgin, Alexeij Y., Woerlee, P.H.

Publikováno v: Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002, 35-38
STARTPAGE=35;ENDPAGE=38;TITLE=Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
ISSUE=5;STARTPAGE=35;ENDPAGE=38;TITLE=5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Recent reports indicate that the incorporation of deuterium in the gate oxide of MOS-transistors can improve the integrity of thin gate oxides. The easiest and most direct means to incorporate the deuterium is to grow the gate oxide using heavy water

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::347d7828e61799cc4428f974c406a252
https://research.utwente.nl/en/publications/comparison-of-h2o-and-d2o-oxidation-kinetics-of-silicon(bc53b8f2-c96b-4e69-8187-d99d31173bef).html

Zobrazit plný text záznamu

Gate current for p+-poly PMOS devices under gate injection conditions

Autor: Hof, A.J., Holleman, J., Woerlee, P.H.

Publikováno v: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 72-75
STARTPAGE=72;ENDPAGE=75;TITLE=Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003

In current CMOS processing both n+-poly and p+-poly gates are used. The I-V –relationship and reliability of n+-poly devices are widely studied and well understood. Gate currents and reliability for p+-poly PMOS devices under gate injection conditi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::c1e0ac7b7db1e1c8017a6446ae143120
https://research.utwente.nl/en/publications/gate-current-for-ppoly-pmos-devices-under-gate-injection-conditions(794a16f3-19d8-49e8-8c55-9e9cbe0f9f52).html

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání