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A compact and reconfigurable silicon nitride time-bin entanglement circuit

Autor: Xiong, C., Zhang, X., Mahendra, A., He, J., Choi, D. -Y., Chae, C. J., Marpaung, D., Leinse, A., Heideman, R. G., Hoekman, M., Roeloffzen, C. G. H., Oldenbeuving, R. M., van Dijk, P. W. L., Taddei, C., Leong, P. H. W., Eggleton, B. J.

Publikováno v: Optica Vol. 2, Issue 8, pp. 724-727 (2015)

Photonic chip based time-bin entanglement has attracted significant attention because of its potential for quantum communication and computation. Useful time-bin entanglement systems must be able to generate, manipulate and analyze entangled photons

Externí odkaz: http://arxiv.org/abs/1506.02758

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637-nm Hybrid-Integrated Diode Laser

Autor: Winkler, L. V., Albert van Rees, Gerritsma, K., Hoekman, M., Schrinner, P. P. J., Dekker, R., Peter van der Slot, Nölleke, C., Klaus-Jochen Boller

Publikováno v: ISSUE=26;TITLE=26th annual Symposium of the IEEE Photonics Benelux Chapter 2022
University of Twente Research Information (Pure Portal)

We present the first hybrid integrated extended cavity diode laser (ECDL) tunable around 637 nm. This wavelength range is important for excitation of nitrogen vacancy centers (NV) in diamond, one of the leading platforms for quantum information proce

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8eb7ff7d53bceda589d978db9d80ab63
https://research.utwente.nl/en/publications/4ac498b7-6de5-4547-b685-be30fe112ba2

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Akademický článek

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Akademický článek

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First demonstration of a hybrid integrated InP-Si3N4diode laser for broadband optical frequency comb generation

Autor: Bastiaens, H.M.J., Neijts, G., Memon, A., Fan, Y., Mak, J., Geskus, D., Hoekman, M., Moskalenko, V., Bente, E.A.J.M., Boller, K.J., Belyanin, Alexey A., Smowton, Peter M.

Publikováno v: Novel In-Plane Semiconductor Lasers XX
Novel In-Plane Semiconductor Lasers XX, 11705

We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bf03fe977af3503390cc90734dfba5e
https://doi.org/10.1117/12.2593818

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Second-order nonlinear conversion in silicon nitride waveguides

Autor: Garcia Porcel, M.A., Epping, J.P., Hoekman, M., van der Slot, P.J.M., Boller, Klaus J.

Publikováno v: Physics@Veldhoven 2018

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::82aee2038a8a6831b01c05cc56a5394b
https://research.utwente.nl/en/publications/secondorder-nonlinear-conversion-in-silicon-nitride-waveguides(9c6a7476-85f9-4fd1-9eb6-af042f64a0a6).html

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Liquid crystal phase modulator integration on the triplex photonic platform

Autor: Wörhoff, K., Ryabchun, A., Hoekman, M., Epping, J., Grootjans, R., Leinse, A., Sodnik, Zoran, Karafolas, Nikos, Cugny, Bruno

Publikováno v: International Conference on Space Optics, ICSO 2018

Technology integration of liquid crystal cells for electro-optic modulation has been implemented on the commercial TriPleX photonic platform. Design and fabrication procedure have been optimized for fulfilling the low insertion loss criterion for app

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6781deea0b69f3e3727d6938eb63dca9
http://www.scopus.com/inward/record.url?scp=85072657442&partnerID=8YFLogxK

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