Low temperature inorganic chemical vapor deposition of Ti-Si-N diffusion barrier liners for gigascale copper interconnect applications.

Autor: Eisenbraun, Eric, Upham, Allan, Dash, Raj, Zeng, Wanxue, Hoefnagels, Johann, Lane, Sarah, Anjum, Dalaver, Dovidenko, Katharine, Kaloyeros, Alain, Arkles, Barry, Sullivan, John J.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 4, p2011-2015, 5p