Luminescence behavior of semipolar (101¯1) InGaN/GaN 'bow-tie' structures on patterned Si substrates

Autor: Bruckbauer, J., Trager-Cowan, C., Hourahine, B., Winkelmann, A., Vennéguès, P., Ipsen, A., Yu, X., Zhao, X., Wallace, M.J., Edwards, P.R., Naresh-Kumar, G., Hocker, M., Bauer, S., Müller, R., Bai, J., Thonke, K., Wang, T., Martin, R.W.

In this work, we report on the innovative growth of semipolar “bow-tie”-shaped GaN structures containing InGaN/GaN multiple quantum wells (MQWs) and their structural and luminescence characterization. We investigate the impact of growth on patter

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::8bce0ced33c17036aee3d2d82f2d7270
https://eprints.whiterose.ac.uk/156903/1/1.5129049.pdf

Stacking fault emission in GaN: Influence of n-type doping.

Autor: Hocker, M., Tischer, I., Neuschl, B., Thonke, K., Caliebe, M., Klein, M., Scholz, F.

Publikováno v: Journal of Applied Physics; 5/14/2016, Vol. 119 Issue 18, p185703-1-185703-6, 6p, 1 Diagram, 5 Graphs

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Weak ferromagnetism of the charge stripes in La5/3Sr1/3NiO4

Autor: Klingeler, R., Buchner, B., Cheong, S.-W., Hocker, M.

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2005, pp.0
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 0, pp.0

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3913a010a884c3b2362c928904c49ba9
https://hal.archives-ouvertes.fr/hal-00015968

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