Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hocine Boubekeur"'
Publikováno v:
Journal of Applied Physics. 92:3257-3265
The contamination risk of processing with platinum electrodes on device performance in ferroelectric memories is assessed in this work. Details of platinum diffusion to the active regions at annealing temperatures of 800 °C are investigated by secon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d9f7b2f4ca4c1eb5dcf1aa945038976
https://doi.org/10.1063/1.1500414
https://doi.org/10.1063/1.1500414
Publikováno v:
Journal of Non-Crystalline Solids. 303:12-16
Barium impact on the gate oxide breakdown was studied using E -ramp and constant current stress (CCS) charge to breakdown. Wafers were contaminated with Ba after a 7.5 nm gate oxide growth and 300 nm poly-silicon deposition. The measurements were don
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c985c717d8d6b48ff289448a210f8f0
https://doi.org/10.1016/s0022-3093(02)00957-2
https://doi.org/10.1016/s0022-3093(02)00957-2
Autor:
Boaz Eitan, Stefano Parascandola, Dirk Caspary, Torsten Müller, N. Schulze, J. Deppe, Thomas Mikolajick, E. Redmard, V. Polei, Hocine Boubekeur, A. Shappir, L. Bach, P. Kratzert, J. Wilier, M. Strassburg, S. Riedel, N. Nagel, K.-H. Kusters, Dominik Olligs, Ilan Bloom
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
A 90nm Twin Flash memory cell with a size of 0.029/spl mu/m/sup 2//bit (3.5F/sup 2/) is presented. This cell is introduced first in a 1.8V, 2Gbit data flash. The Twin Flash technology is based on a shallow trench isolation (STI) bounded cell with loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fddeb382afc22f722556a3c22aba67bd
https://doi.org/10.1109/.2005.1469236
https://doi.org/10.1109/.2005.1469236
Autor:
Nicolas Nagel, Werner Pamler, Lothar Frey, Thomas Mikolajick, Christine Dehm, Hocine Boubekeur, Heiner Ryssel, Anton J. Bauer
The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide growth, 300 nm poly-silicon deposition and subsequent p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50afcd82e7d57977541f81fbbb497b7a
https://publica.fraunhofer.de/handle/publica/198906
https://publica.fraunhofer.de/handle/publica/198906
Autor:
Heiner Ryssel, Lothar Frey, J. Steiner, Werner Pamler, Bernd O. Kolbesen, Anton J. Bauer, G. Kilian, Thomas Mikolajick, Christine Dehm, Hocine Boubekeur, J. Höpfner
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8778c100d304a7f80dbee541e35a95bf
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034505757&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034505757&partnerID=MN8TOARS
Autor:
Matthias Markert, B. Tippelt, David Pritchard, Martin Verhoeven, Torsten Mueller, Ludovic Lattard, Mark Isler, C. Schupke, E.G. Stein v. Kamienski, R. Reisdorf, Christoph Kleint, Veronika Polei, F. Heinrichsdorf, J.-U. Sachse, Hocine Boubekeur, Dominik Olligs, Nicolas Nagel, S. Teichert, Clemens Fitz, Thomas Mikolajick, S. Riedel, Christoph Ludwig
Publikováno v:
Scopus-Elsevier
A 63nm Twin Flash memory cell with a size of 0.0225μm2 per 2 (or 4) bits is presented. To achieve small cell areas, a buried bit line and an aggressive gate length of 100 nm are the key features of this cell together with a minimum thermal budget pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0451d58c821d4377fedda076b94a8dcc
http://www.scopus.com/inward/record.url?eid=2-s2.0-38549083138&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-38549083138&partnerID=MN8TOARS