Zobrazeno 1 - 10
of 141
pro vyhledávání: '"Hocheon Yoo"'
Autor:
Changhyeon Lee, Leila Rahimifard, Junhwan Choi, Jeong-ik Park, Chungryeol Lee, Divake Kumar, Priyesh Shukla, Seung Min Lee, Amit Ranjan Trivedi, Hocheon Yoo, Sung Gap Im
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)
Abstract Probabilistic inference in data-driven models is promising for predicting outputs and associated confidence levels, alleviating risks arising from overconfidence. However, implementing complex computations with minimal devices still remains
Externí odkaz:
https://doaj.org/article/fbfcc4e40a1c44fbad736369add4619c
Publikováno v:
Advanced Science, Vol 11, Iss 18, Pp n/a-n/a (2024)
Abstract For enhanced security in hardware‐based security devices, it is essential to extract various independent characteristics from a single device to generate multiple keys based on specific values. Additionally, the secure destruction of authe
Externí odkaz:
https://doaj.org/article/73ba826fc5f14d239efb84a99ece5f5a
Publikováno v:
Polymers, Vol 16, Iss 18, p 2613 (2024)
The use of organic semiconductors in electronic devices, including transistors, sensors, and memories, unlocks innovative possibilities such as streamlined fabrication processes, enhanced mechanical flexibility, and potential new applications. Nevert
Externí odkaz:
https://doaj.org/article/1ef1829b49df4662984dfb5f3cdeba60
Publikováno v:
Micromachines, Vol 15, Iss 9, p 1115 (2024)
Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advan
Externí odkaz:
https://doaj.org/article/16ccc2f5fdb04aa7a1bd6e357b2886f7
Autor:
Gunhoo Woo, Jinill Cho, Heejung Yeom, Min Young Yoon, Geon Woong Eom, Muyoung Kim, Jihun Mun, Hyo Chang Lee, Hyeong-U Kim, Hocheon Yoo, Taesung Kim
Publikováno v:
Small Science, Vol 4, Iss 2, Pp n/a-n/a (2024)
In the era of big data, negative differential resistance (NDR) devices have attracted significant attention as a means of handling massive amounts of information. While 2D materials have been used to achieve NDR behavior, their intrinsic material cha
Externí odkaz:
https://doaj.org/article/7525d3017bdf4b7b99c35b3e0a53856d
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable
Externí odkaz:
https://doaj.org/article/d4f36c79193b4c7b9bfefd1acc022995
Publikováno v:
Advanced Science, Vol 10, Iss 30, Pp n/a-n/a (2023)
Abstract Mixed layers of octadecyltrichlorosilane (ODTS) and 1H,1H,2H,2H‐perfluorooctyltriethoxysilane (FOTS) on an active layer of graphene are used to induce a disordered doping state and form a robust defense system against machine‐learning at
Externí odkaz:
https://doaj.org/article/cf33f9f6f196467786d2458d31d39b47
Publikováno v:
Nano-Micro Letters, Vol 14, Iss 1, Pp 1-29 (2022)
Abstract Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circ
Externí odkaz:
https://doaj.org/article/2c66d2105cda4f658ecd21bdf64b98b4
Publikováno v:
Materials Today Advances, Vol 18, Iss , Pp 100362- (2023)
Photodetection of organic-inorganic hybrid heterostructures from visible to invisible ultraviolet and infrared rays is revisited with respect to their material properties aspect, device structure, and emerging applications. The approach of organic-in
Externí odkaz:
https://doaj.org/article/a2168f1f0ba5484b8f2ace7fa9d5896b
Autor:
Sang Yeon Park, Younggon Choi, Yong Hyeok Seo, Hojun Kim, Dong Hyun Lee, Phuoc Loc Truong, Yongmin Jeon, Hocheon Yoo, Sang Jik Kwon, Daeho Lee, Eou-Sik Cho
Publikováno v:
Micromachines, Vol 15, Iss 1, p 103 (2024)
Bottom-gate thin-film transistors (TFTs) with n-type amorphous indium-gallium-zinc oxide (a-IGZO) active channels and indium-tin oxide (ITO) source/drain electrodes were fabricated. Then, an ultraviolet (UV) nanosecond pulsed laser with a wavelength
Externí odkaz:
https://doaj.org/article/8b0e7fbcbd3f454a8f976bc99e5625b5