Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Autor: Mehandru, R., Dang, G., Kim, S., Ren, F., Hobson, W.S., Lopata, J., Pearton, S.J., Chang, W., Shen, H.

Publikováno v: In Solid State Electronics 2002 46(5):699-704

Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs

Autor: Hobson, W.S, Lopata, J, Chirovsky, L.M.F, Chu, S.N.G, Dang, G, Lou, B, Ren, F, Tayahi, M, Kilper, D.C, Pearton, S.J

Publikováno v: In Solid State Electronics 2001 45(9):1639-1644

npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions

Autor: Dang, G, Luo, B, Zhang, A.P, Cao, X.A, Ren, F ^*, Pearton, S.J, Cho, H, Hobson, W.S, Lopata, J, van Hove, J.M, Klaassen, J.J, Polley, C.J, Wowchack, A.M, Chow, P.P, King, D.J

Publikováno v: In Solid State Electronics 2000 44(12):2097-2100

Inductively coupled plasma etching of III–V semiconductors in BCl 3-based chemistries : II. InP, InGaAs, InGaAsP, InAs and AlInAs

Autor: Maeda, T ^{a, *}, Lee, J.W ^b, Shul, R.J ^c, Han, J ^c, Hong, J ^a, Lambers, E.S ^a, Pearton, S.J ^a, Abernathy, C.R ^a, Hobson, W.S ^d

Publikováno v: In Applied Surface Science 1999 143(1):183-190

Growth of Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs.

Autor: Hong, M., Ren, F., Hobson, W.S., Kuo, J.M., Kwo, J., Mannaerts, J.P., Lothian, J.R., Marcus, M.A., Liu, C.T., Sergent, A.M., Lay, T.S., Chen, Y.K.

Publikováno v: Compound Semiconductors 1997 Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors; 1998, p319-324, 6p