Zobrazeno 1 - 10
of 447
pro vyhledávání: '"Hobart, Karl"'
Autor:
Aller, Henry T., Pfeifer, Thomas W., Mamun, Abdullah, Huynh, Kenny, Tadjer, Marko, Feygelson, Tatyana, Hobart, Karl, Anderson, Travis, Pate, Bradford, Jacobs, Alan, Lundh, James Spencer, Goorsky, Mark, Khan, Asif, Hopkins, Patrick, Graham, Samuel
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered i
Externí odkaz:
http://arxiv.org/abs/2408.08076
Autor:
Kelly, Frank P., Landi, Matthew M., Vesto, Riley E., Tadjer, Marko J., Hobart, Karl D., Kim, Kyekyoon
Publikováno v:
Journal of Applied Physics; 10/21/2024, Vol. 136 Issue 15, p1-8, 8p
Autor:
Cheng, Zhe, Li, Ruiyang, Yan, Xingxu, Jernigan, Glenn, Shi, Jingjing, Liao, Michael E., Hines, Nicholas J., Gadre, Chaitanya A., Idrobo, Juan Carlos, Lee, Eungkyu, Hobart, Karl D., Goorsky, Mark S., Pan, Xiaoqing, Luo, Tengfei, Graham, Samuel
Publikováno v:
Nature Communications, 12, 6901, 2021
Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic in
Externí odkaz:
http://arxiv.org/abs/2105.14415
Autor:
Yates, Luke, Cheng, Zhe, Bai, Tingyu, Hobart, Karl, Tadjer, Marko, Feygelson, Tatyana I., Pate, Bradford B., Goorsky, Mark, Graham, Samuel
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as
Externí odkaz:
http://arxiv.org/abs/2006.12464
Autor:
Cheng, Zhe, Wheeler, Virginia D., Bai, Tingyu, Shi, Jingjing, Tadjer, Marko J., Feygelson, Tatyana, Hobart, Karl D., Goorsky, Mark S., Graham, Samuel
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is significantly lower th
Externí odkaz:
http://arxiv.org/abs/1908.08665
Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its thermal conduct
Externí odkaz:
http://arxiv.org/abs/1901.02961
Akademický článek
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Autor:
Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D., Feygelson, Tatyana I., Tadjer, Marko J., Pate, Bradford B., Foley, Brian M., Yates, Luke, Pantelides, Sokrates T., Cola, Baratunde A., Goorsky, Mark, Graham, Samuel
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is significantly
Externí odkaz:
http://arxiv.org/abs/1807.11400
Autor:
Jacobs, Alan G., Feigelson, Boris N., Lundh, James S., Spencer, Joseph A., Freitas, Jaime A., Gunning, Brendan P., Kaplar, Robert J., Zhang, Yuhao, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Nov2024, Vol. 221 Issue 21, p1-6, 6p
Akademický článek
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