Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ho-cheol Jang"'
Publikováno v:
Transactions of the Korean Society for Noise and Vibration Engineering. 33:135-140
Autor:
Yae Jee Baek, Woo-Joong Kim, Jae-Hoon Ko, Youn-Jung Lee, Jin Young Ahn, Jung Ho Kim, Ho Cheol Jang, Hye Won Jeong, Yong Chan Kim, Yoon Soo Park, Sung-Han Kim, Kyong Ran Peck, Eui-Cheol Shin, Jun Yong Choi
Publikováno v:
Vaccine. 41:1694-1702
Autor:
Seung Hoon Lee, Eun-Kyoung Choi, Yun-Woong Paek, Jae-Hyung Kim, In-Chol Kang, Hyun-Chul Lee, Ho-Cheol Jang, Won-Mann Oh, Ho-Cheol Kang, Hyun-Jin Kim
Publikováno v:
International Immunopharmacology. 6:908-915
Nuclear factor-kappaB (NF-kappaB) is a transcription factor that plays crucial roles in inflammation and immunity. Understanding the positive and negative regulation of NF-kappaB activity is therefore of fundamental importance. A few previous studies
Autor:
Ho Cheol Jang, Kye Bock Lee
Publikováno v:
Nuclear Engineering and Design. 172:351-357
Fully developed turbulent flows in closely spaced bare rod arrays have been studied numerically by using a nonlinear κ−ϵ model. This model permits inequality of the Reynolds normal stresses, a necessary condition for calculating turbulence-driven
Autor:
Dal-Soo Kim, Dong-Nam Kim, Seung-Geun Kang, Nam-Yong Kim, Young-Chul Jo, Byung-Ju Lee, Jae-Hyung Kim, Ho-Cheol Jang
Publikováno v:
2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT).
The IC industry has been paid a large amount of quality cost for Electrical Overstress(EOS) damages. This paper described the failure analysis procedure to find EOS source and the experimental methodology to verify the failure mechanism in the subsys
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
Serious gate oscillation of power MOSFETs under avalanche condition has been observed, degrading an avalanche withstanding capability. Using experiments as well as numerical simulation, it is shown that this gate oscillation in avalanche mode results
Autor:
Jae-Hyung Kim, Dong-Nam Kim, Ho-Cheol Jang, Young-Chul Jo, Nam-Yong Kim, Seung-Geun Kang, Byung-Ju Lee, Dal-Soo Kim
Publikováno v:
2010 34th IEEE/CPMT International Electronic Manufacturing Technology Symposium (IEMT); 2010, p1-4, 4p
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices & IC's; 2007, p113-116, 4p
Publikováno v:
Twenty Sixth IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.00CH37146); 2000, p288-293, 6p
Publikováno v:
The Proceedings of the International Conference on Nuclear Engineering (ICONE). 2003:233