Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Ho-Ki Kwon"'
Autor:
Ho-Sang Kwack, Hyun Soo Lim, Hyun-Don Song, Sung-Hoon Jung, Hyun Kyong Cho, Ho-Ki Kwon, Myeong Seok Oh
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022127-022127-5 (2012)
The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of texture formation and thickness of G
Externí odkaz:
https://doaj.org/article/f282522a601c45c7883a3ad59d7482e5
Autor:
Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ho-Ki Kwon, Chang-Hee Hong, S. Chandramohan, Ji Hye Kang, Hyun Don Song, Hyun Kyong Cho
Publikováno v:
Journal of Crystal Growth. 314:66-70
The effect of selective area growth (SAG) on wafer bowing of GaN-based light-emitting diodes (LEDs) is investigated. The SAG of LED structures was carried out on a silicon dioxide (SiO 2 ) mask pattern with periodic 1000×1000 μm openings, along the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5bb0e7bd6fea853ea867713e0b6b38
https://doi.org/10.1016/j.jcrysgro.2010.10.104
https://doi.org/10.1016/j.jcrysgro.2010.10.104
Publikováno v:
Journal of the Korean Physical Society. 57:1779-1783
In this paper we present the results of experiments and simulations for the light output power from LEDs for various refractive indices and the geometrical structures of the LED encapsulants. InGaN-based LED chips were fabricated and were bonded in A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::411120456b053abf837d10b826cdda7f
https://doi.org/10.3938/jkps.57.1779
https://doi.org/10.3938/jkps.57.1779
Publikováno v:
physica status solidi (a). 208:195-198
Optical properties of strain-compensated InGaN/InGaN quantum well (QW) structures using a InGaN substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653a50526a8c434bd0f2d5f579285bab
https://doi.org/10.1002/pssa.201026420
https://doi.org/10.1002/pssa.201026420
Publikováno v:
physica status solidi c. 7:2157-2161
For the case of the white LED (phosphor converted), the temperature affects phosphor in addition to chip and package. The heat can cause the decrease of the phosphor performance as well as the irreversible damage to the phosphor. In this study, the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::133e1ddd792c8a8af311d7129241b6eb
https://doi.org/10.1002/pssc.200983493
https://doi.org/10.1002/pssc.200983493
Publikováno v:
physica status solidi c. 7:2183-2186
We demostrate the efficient p-type reflector for high performance vertical InGaN/GaN light emitting diodes (LEDs) with 1 × 1mm2 chip size. The reflector consists of Indium-Tin-Oxide (ITO) and Ag-Pd-Cu (APC) alloy. The ITO was inserted between p-GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4638ab1e4869584e4beb8f04f3eb99d1
https://doi.org/10.1002/pssc.200983605
https://doi.org/10.1002/pssc.200983605
Publikováno v:
Microelectronics Reliability. 49:1231-1235
We have proposed a new concept of metal package by which we can estimate the lifetime of blue light-emitting diode (LED) chips with high accuracy. Components in conventional LED package which may obscure the degradation behavior of LED chip itself we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9225d714f5256ae96e03aeb9338f2a4
https://doi.org/10.1016/j.microrel.2009.07.052
https://doi.org/10.1016/j.microrel.2009.07.052
Autor:
B. S. Shelton, Ho Ki Kwon, D. J. H. Lambert, T. G. Zhu, Russell D. Dupuis, C. J. Eiting, Michael M. Wong
Publikováno v:
Journal of Applied Physics. 90:1817-1822
The optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures (SHs) grown by metalorganic chemical vapor deposition are investigated at low temperature using photoluminescence measurements. The formation of a two-dimensiona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1138539ebd3ea0c5bf4b737bbc299aec
https://doi.org/10.1063/1.1330767
https://doi.org/10.1063/1.1330767
Autor:
Ho Ki Kwon, Jae-Wook Kim, Sang-Kook Han, Jeong-Hyeon Choi, Jeung Mo Kang, Pyung Sik Oh, Du Hyun Kim
Publikováno v:
physica status solidi c. 7:2205-2207
This paper reports the degradation characteristics of blue GaN-LED (Gallium Nitride-light emitting diode) chip related to various packages. Three types of package have been considered to investigate degradation characteristics in this study. One pack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dffc8f36268a91513db2688fd20febc
https://doi.org/10.1002/pssc.200983512
https://doi.org/10.1002/pssc.200983512
Autor:
B. S. Shelton, D. J. H. Lambert, Michael M. Wong, T. G. Zhu, Zuzanna Liliental-Weber, M Benamura, Russell D. Dupuis, C. J. Eiting, Ho Ki Kwon
Publikováno v:
Journal of Crystal Growth. 221:240-245
We have investigated the time decay of the photoluminescence (PL) at room temperature of high-quality (HQ) and low-quality (LQ) GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. For undoped and Si-doped HQ GaN, the ful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a0e966e2fe94045a4e2e6f04e0c6ae
https://doi.org/10.1016/s0022-0248(00)00692-8
https://doi.org/10.1016/s0022-0248(00)00692-8