Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Ho-Keun Song"'
Publikováno v:
Advanced Science and Technology Letters.
Vision-based SLAM is steadily gaining importance in autonomous robot navigation, human-machine interface and mobile computing application. Typically, visual SLAM assumes that visual features in image sequence are static. However, SLAM system is diffi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44a508059bb0c6c8d186efe12b5d49c
https://doi.org/10.14257/astl.2015.118.03
https://doi.org/10.14257/astl.2015.118.03
Autor:
Myeong Sook Oh, Jong Ho Lee, Nam-Kyun Kim, Jeong Hyun Moon, Kuan Yew Cheong, Hyeong Joon Kim, Wook Bahng, Ho Keun Song, Jeong Hyuk Yim
Publikováno v:
Materials Science Forum. :731-734
We have investigated the electrical and physical properties of high-temperature (1300, 1400 oC) grown dry oxide with or without post oxidation annealing (POA) in nitric oxide (NO) gas. A significant reduction in interface-trap density (Dit) has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db06a9da68398aab5f110281f7aa777b
https://doi.org/10.4028/www.scientific.net/msf.600-603.731
https://doi.org/10.4028/www.scientific.net/msf.600-603.731
Autor:
Jeong Hyun Moon, Myeong Sook Oh, Sun Young Kwon, Ho Keun Song, Han Seok Seo, Hyeong Joon Kim, Jong-Ho Lee, Jeong Hyuk Yim
Publikováno v:
Materials Science Forum. :971-974
Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad59bc409f5fbf6dee6f2608806a14d9
https://doi.org/10.4028/www.scientific.net/msf.600-603.971
https://doi.org/10.4028/www.scientific.net/msf.600-603.971
Autor:
Hyeong Joon Kim, Jeong Hyun Moon, Wook Bahng, Ho Keun Song, Dong Hwan Kim, Jeong Hyuk Yim, Nam-Kyun Kim, Kwang Seok Seo
Publikováno v:
Materials Science Forum. :647-650
We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478ae5e9d7a58f4433432b85b8dea951
https://doi.org/10.4028/www.scientific.net/msf.556-557.647
https://doi.org/10.4028/www.scientific.net/msf.556-557.647
Autor:
Jong Ho Lee, Da Il Eom, Hoon Joo Na, Nam-Kyun Kim, Hyeong Joon Kim, Jeong Hyun Moon, Wook Bahng, Jeong Hyuk Yim, Ho Keun Song, Kuan Yew Cheong
Publikováno v:
Materials Science Forum. :643-646
We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1440e754284994386bb185047bc9e0c0
https://doi.org/10.4028/www.scientific.net/msf.556-557.643
https://doi.org/10.4028/www.scientific.net/msf.556-557.643
Autor:
Jae Bin Lee, Hoon Joo Na, Ho Keun Song, Hyeong Joon Kim, Jeong Hyuk Yim, Jong Ho Lee, Jeong Hyun Moon, Han Seok Seo
Publikováno v:
Materials Science Forum. :763-766
Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 μm and a gate width of 100 μm was 430 mA/mm, and the transconductance was 25 mS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1968d7a6fd730f66e761706d82dc82e3
https://doi.org/10.4028/www.scientific.net/msf.556-557.763
https://doi.org/10.4028/www.scientific.net/msf.556-557.763
Autor:
Han Seok Seo, Sun Young Kwon, Jong Ho Lee, Jeong Hyun Moon, Ho Keun Song, Jeong Hyuk Yim, Hyeong Joon Kim
Publikováno v:
Journal of Crystal Growth. 305:83-87
Heavily nitrogen-doped 4H-SiC homoepitaxial films were grown on normal p-type and porous 4H-SiC (PSC) substrates. The nitrogen doping concentration and resistivity of the epitaxial films, measured by Hall measurement, were about 1020–1021 cm−3 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646e37a1d1c4edf49ca75db36d2f4802
https://doi.org/10.1016/j.jcrysgro.2007.04.042
https://doi.org/10.1016/j.jcrysgro.2007.04.042
Autor:
Dae Hwan Kim, Myong Suk Oh, Jae Bin Lee, Hyeong Joon Kim, Ho Keun Song, Jeong Hyuk Yim, Jeong Hyun Moon, Jong Ho Lee
Publikováno v:
Solid State Phenomena. :105-108
Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210) phases was confirmed by XRD analysis. Formation of Ti carbide and sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36271740c56a5f51a809338fbd24c5ca
https://doi.org/10.4028/www.scientific.net/ssp.124-126.105
https://doi.org/10.4028/www.scientific.net/ssp.124-126.105
Publikováno v:
Materials Science Forum. :215-218
In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb818e928810929f27ecea685a8e5581
https://doi.org/10.4028/www.scientific.net/msf.527-529.215
https://doi.org/10.4028/www.scientific.net/msf.527-529.215
Autor:
Ho Keun Song, Jeong Hyun Moon, Sang Yong No, Hyeong Joon Kim, Hoon Joo Na, Jae Bin Lee, Jeong Hyuk Yim, Da Il Eom
Publikováno v:
Materials Science Forum. :1083-1086
The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655ed89519dc288977a9b6fbe57237c0
https://doi.org/10.4028/www.scientific.net/msf.527-529.1083
https://doi.org/10.4028/www.scientific.net/msf.527-529.1083