Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Ho-Jin Yun"'
Publikováno v:
Oral Biology Research. 46:119-127
Autor:
Keon-Il Yang, Choong-Seop Ji, Ock-Hyun Cho, Ho-Jin Yun, Won-Pyo Lee, Byung-Ock Kim, Sang-Joun Yu
Publikováno v:
Oral Biology Research. 46:1-9
Autor:
Ho-Jin Yun
Publikováno v:
Nammyonghak Studies. 63:97-140
Autor:
Ho-jin Yun
Publikováno v:
Nammyonghak Studies. 60:1-55
Autor:
Gyuseok Cho, Chul Huh, Ho-Jin Yun, Jae-Gab Lim, Chan Lim, Hi-Deok Lee, Jun-Kyo Jung, Jung Hyun Park, Seung-Dong Yang, Ga-Won Lee, Seong-gye Park
Publikováno v:
Solid-State Electronics. 140:134-138
In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiN X ) charge trapping layer. The Si-NCs were in-situ grown by PECVD witho
Autor:
Seong-Won Chea, Jeong-Hyun Park, Ho-Jin Yun, Seung-Dong Yang, Jun-Kyo Jeong, Ga-Won Lee, Ki-Yun Eom, Hi-Deok Lee
Publikováno v:
Thin Solid Films. 638:89-95
In this study, Al-doped zinc oxide (AZO) thin films with different Al concentrations fabricated by atomic layer deposition are investigated to determine the Al doping effect for AZO/ZnO double-stacked active layer thin-film transistor (TFT) applicati
Fabrication and Characterization of TFT Gas Sensor with ZnO Nanorods Grown by Hydrothermal Synthesis
Publikováno v:
Journal of the Korean Institute of Electrical and Electronic Material Engineers. 30:229-234
Autor:
Ho-Jin Yun, Jin-Un An, Yu-Mi Kim, Ga-Won Lee, Seung-Dong Yang, Hi-Deok Lee, Jin-Sup Kim, Young-Uk Ko, Kwang-Seok Jeong, Seong-Hyeon Kim
Publikováno v:
Thin Solid Films. 598:109-114
Low-frequency noise (1/f noise) has been analyzed to characterize the amorphous/crystalline silicon heterojunction diodes with passivation layer of a-Si:H (p–i–n), Al2O3 (p–Al2O3–n), and ZnO (p–ZnO–n) and without passivation (p–n). Four
Publikováno v:
Clinical Oral Implants Research. 31:274-274
Autor:
Seong-Won Chea, Jin-Seob Kim, Yu-Mi Kim, Seung-Dong Yang, Hi-Deok Lee, Ho-Jin Yun, Ga-Won Lee, Ki-Yun Eom
Publikováno v:
Journal of the Institute of Electronics and Information Engineers. 52:59-63
This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap densit