Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Ho Kyun Ahn"'
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 22, Iss 6, Pp 678-685 (2022)
In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the
Externí odkaz:
https://doaj.org/article/6a8b47c1faaa430eb409d0e415fe061a
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Youngho Bae, Hyun-Wook Jung, Il-Gyu Choi, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Dong-Min Kang, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 898 (2023)
Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When th
Externí odkaz:
https://doaj.org/article/3142430887454ec1bd26ee450c90f97a
Publikováno v:
The transactions of The Korean Institute of Electrical Engineers. 71:1812-1819
Autor:
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Crystals, Vol 11, Iss 11, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Externí odkaz:
https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
Publikováno v:
The Journal of Korean Institute of Electromagnetic Engineering and Science. 33:356-364
Publikováno v:
Journal of the Korean Physical Society.
Autor:
Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2116 (2020)
An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-g
Externí odkaz:
https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2175 (2020)
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and H
Externí odkaz:
https://doaj.org/article/18e43b84a212499da1141036540960f9
Autor:
Min Jeong Shin, Dong Min Kang, Hae Cheon Kim, Jongmin Lee, Hyun-Wook Jung, Jae-Won Do, Jong-Won Lim, Ho Kyun Ahn, Sungil Kim, Kyu-Jun Cho, Hyung Sup Yoon, Byoung-Gue Min
Publikováno v:
Journal of the Korean Physical Society. 71:360-364
We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etching with a gas mixture of BCl3/Cl2 and
Publikováno v:
Journal of the Korean Physical Society. 71:365-369
In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device performance. To estimate the possibility of ap