Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Ho Bang Ching"'
Autor:
Syuhei Shigaki, Ho Bang Ching, Yaguchi Hiroaki, Ryuji Onishi, Suguru Sassa, Endo Takafumi, Noriaki Fujitani, Rikimaru Sakamoto
Publikováno v:
ECS Transactions. 60:263-271
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c909f4f4f1a5288a4459d80b0c5ef
https://doi.org/10.1149/06001.0263ecst
https://doi.org/10.1149/06001.0263ecst
Autor:
Yaguchi Hiroaki, Rikimaru Sakamoto, Ryuji Onishi, Shibayama Wataru, Ho Bang Ching, Shigaki Shuhei
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Tri-layer process is the one of the key technique both for the lithography and etching around Hp20nm patterning. In applying for tri-layer process, we are focusing on inorganic type under layer which mainly containing Si atoms. This Si type hard mask
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d227c745c27aa1e52465af795f5b129
https://doi.org/10.1117/12.2011441
https://doi.org/10.1117/12.2011441
Autor:
Noriaki Fujitani, Ryuji Onishi, Yaguchi Hiroaki, Suguru Sassa, Syuhei Shigaki, Ho Bang Ching, Rikimaru Sakamoto, Endo Takafumi
Publikováno v:
SPIE Proceedings.
For below Hp22nm generation, Hard-mask strategy is one of the key issues to achieve the good balance for Lithography and Etching performance. The thickness of resist should be thicker enough to obtain the etching margin for the substrate etching. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1063d878f3aa0c2d520c4bd26f3c8ee
https://doi.org/10.1117/12.916328
https://doi.org/10.1117/12.916328
Akademický článek
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Publikováno v:
Proceedings of SPIE; Nov2009 Part 3, Issue 1, p75201F-75201F-8, 8p
Autor:
Sakamoto, Rikimaru, Endo, Takafumi, Ho, Bang-Ching, Kimura, Shigeo, Ishida, Tomohisa, Kato, Masakazu, Fujitani, Noriaki, Onishi, Ryuji, Hiroi, Yoshiomi, Maruyama, Daisuke
Publikováno v:
Proceedings of SPIE; Nov2009 Part 3, Issue 1, p75201Y-75201Y-10, 10p
Autor:
Takei, Satoshi, Horiguchi, Yusuke, Ohashi, Tomoya, Ho, Bang-Ching, Nakajima, Yasuyuki, Mano, Yuichi, Muramatsu, Makoto, Iwashita, Mitsuaki, Tsuchiya, Katsuhiro, Samura, Akira, Yamada, Yoshiaki, Yamaguchi, Tadayuki
Publikováno v:
Proceedings of SPIE; Nov2008 Part 2, Issue 1, p69232K-69232K-12, 12p
Autor:
Maruyama, Daisuke, Ho, Bang-Ching, Yoon, Sangwoong, Sakamoto, Rikimaru, Sakaida, Yasushi, Hashimoto, Keisuke, Fujitani, Noriaki, Yaguchi, Hiroaki, Matsubara, Koutastu
Publikováno v:
Proceedings of SPIE; Nov2008, Issue 1, p714037-714037-9, 9p
Publikováno v:
Proceedings of SPIE; Nov2004, Issue 1, p1091-1099, 9p
Autor:
Owe-Yang, D.C., Ho, Bang-ching, Miyazaki, Shinji, Katayama, Tomohide, Susukida, Kenji, Kang, Wenbing, Chang, Yung-Cheng
Publikováno v:
Proceedings of SPIE; Nov2004, Issue 1, p452-460, 9p