Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ho, V. X."'
Publikováno v:
Journal of Luminescence 221 (2020) 117
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers p
Externí odkaz:
http://arxiv.org/abs/2002.04203
Publikováno v:
ACS Photonics, V.5 2018
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient
Externí odkaz:
http://arxiv.org/abs/1802.10456
Publikováno v:
Applied Optics, V57, 2018
The goal of this effort is to establish the conditions and limits under which the Huygens-Fresnel principle accurately describes diffraction in the Monte Carlo ray-trace environment. This goal is achieved by systematic intercomparison of dedicated ex
Externí odkaz:
http://arxiv.org/abs/1802.08814
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperatu
Externí odkaz:
http://arxiv.org/abs/1611.08620
Publikováno v:
Proceedings of SPIE; 6/6/2018, Vol. 10729, p1-7, 7p
Akademický článek
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Autor:
Mitrofanov, Oleg, Tan, Chee Hing, Pau Vizcaíno, José Luis, Razeghi, Manijeh, Ho, V. X., Wang, Y., Cooney, M. P., N., Vinh Q.
Publikováno v:
Proceedings of SPIE; September 2018, Vol. 10729 Issue: 1 p1072907-1072907-7