Zobrazeno 1 - 10
of 902
pro vyhledávání: '"Ho, V A"'
Autor:
Phuong, Ho V. N., Tran, Quang Hoa
A standard graded artinian monomial complete intersection algebra $A=\Bbbk[x_1,x_2,\ldots,x_n]/(x_1^{a_1},x_2^{a_2},\ldots,x_n^{a_n})$, with $\Bbbk$ a field of characteristic zero, has the strong Lefschetz property due to Stanley in 1980. In this pap
Externí odkaz:
http://arxiv.org/abs/2211.13548
Publikováno v:
Journal of Luminescence 221 (2020) 117
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers p
Externí odkaz:
http://arxiv.org/abs/2002.04203
Publikováno v:
ACS Photonics, V.5 2018
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient
Externí odkaz:
http://arxiv.org/abs/1802.10456
Publikováno v:
Applied Optics, V57, 2018
The goal of this effort is to establish the conditions and limits under which the Huygens-Fresnel principle accurately describes diffraction in the Monte Carlo ray-trace environment. This goal is achieved by systematic intercomparison of dedicated ex
Externí odkaz:
http://arxiv.org/abs/1802.08814
Autor:
Merchant, Reshma A., Chan, Y. H., Ling, N. M. W., Chen, M. Z. X., Ho, V. W. T., Wong, B. L. L., Lim, Z., Ng, S. E., Anantharaman, V.
Publikováno v:
Journal of Frailty & Aging; Nov2024, Vol. 13 Issue 4, p507-513, 7p
Publikováno v:
In Environmental Research March 2022 204 Part A
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperatu
Externí odkaz:
http://arxiv.org/abs/1611.08620
Autor:
HO, V. T.1 thehv@hufi.edu.vn, NGUYEN, T. H.1 huongnguyensh@gmail.com, NGUYEN, L. B. N.1 nguyenlambaonghi2000@gmail.com, NGUYEN, T. T. N.1 Thunguyen300688@gmail.com, NGUYEN, M. P.1 phuongnm@hufi.edu.vn
Publikováno v:
SABRAO Journal of Breeding & Genetics. Jun2023, Vol. 55 Issue 3, p877-885. 9p.
Akademický článek
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Autor:
Eichhorn, R., Daly, C., Furuta, F., Ganshyn, A., Gonnella, D., Hall, D., Ho, V., Hoffstaetter, G. H., Liepe, M., May-Mann, J., O'Connell, T., Posen, S., Quigley, P., Sears, J., Veshcherevich, V.
Publikováno v:
Phys. Rev. ST Accel. Beams 19, 012001 (2016)
Over the past years it became evident that the quality factor of a superconducting cavity is not only determined by its surface preparation procedure, but is also influenced by the way the cavity is cooled down. Moreover, different data sets exists,
Externí odkaz:
http://arxiv.org/abs/1411.5285