Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Hitoshi TOKURA"'
Publikováno v:
Applied Surface Science. 371:530-537
Local wettability of silica glass surface is modified by infrared laser irradiation. The silica glass surface exhibits hydrophobic property in the presence of CF3 or (CH3)2 terminal functional groups, which are decomposed by thermal treatment, and de
Publikováno v:
International Journal of Automation Technology. 9:668-673
A laser modification method to control the surface wettability of a silicon and borosilicate glass substrate is proposed and demonstrated. The wettability of the silicon surface decreases after 2.5 W laser irradiation without a change in surface morp
Publikováno v:
Journal of The Japan Society of Electrical Machining Engineers. 48:118-127
Autor:
Hitoshi Tokura
Publikováno v:
Journal of the Japan Society for Precision Engineering. 79:273-277
Publikováno v:
Applied Physics A. 112:1043-1049
The modification of transparent materials using a femtosecond laser has been studied. We previously proposed a new method of modifying glass using a continuous-wave laser, named continuous-wave laser backside irradiation (CW-LBI), in which CW laser i
Publikováno v:
Journal of the Japan Society for Precision Engineering. 77:761-765
Publikováno v:
Journal of the Japan Society for Precision Engineering. 77:694-699
Publikováno v:
Journal of the Japan Society for Precision Engineering. 76:1161-1165
High-aspect-ratio microdrilling of borosilicate glass has been demonstrated by the forth harmonic of nanosecond Nd : YVO4 laser. In this paper, we investigated about the influence of the beam profile on the hole profile. Beam profile was changed by u
Publikováno v:
Appl. Phys. A. 96(No. 4):869-872
We report on a permanent change in the physical properties inside glass that is rapidly heated and quenched with a continuous-wave (CW) laser beam. The absorption of the glass was enhanced by laser heating, and the heated spot moved by thermal radiat
Publikováno v:
Advanced Materials Research. :440-444
Polycrystalline ingot slicing by wire electric discharge machining (W-EDM) has been investigated to reduce kerf loss and wafer thickness. In order to use the sliced wafers for semiconductor devices, the modified surface layer induced by W-EDM must be