Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Hitoshi Kume"'
Autor:
Masahiro Shimizu, Hitoshi Kume, Satoshi Noda, Hideaki Kurata, Yoshinori Sakamoto, Tetsufumi Kawamura, Tsuyoshi Arigane, Yoshitaka Sasago, Osamu Tsuchiya, Kazuo Otsuga, Teruhiko Ito, Takashi Kobayashi, Kazuki Homma, Kazunori Furusawa, Yoshinori Ikeda
Publikováno v:
IEICE Transactions on Electronics. :2146-2156
A 4-Gb AG-AND flash memory was fabricated by using a 90-nm CMOS technology. To reduce cell size, an inversion-layer-bit-line technology was developed, enabling the elimination of both shallow trench isolations and diffusion layers from the memory cel
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 10:54-57
Autor:
Kazuhiro Nishi, Hironori Hayashi, Shigeo Dohata, Satoru Shiraishi, Toshihiko Nagai, Hitoshi Kume
Publikováno v:
PROCEEDINGS OF CIVIL ENGINEERING IN THE OCEAN. 21:1059-1064
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 9:32-36
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 8:37-41
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 8:50-53
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 8:10-13
Autor:
Hitoshi Kume, Tadashi Tadenuma, Mitsuharu Matsumoto, Masatoshi Watanabe, Kyoko Nakamura, Yoshimi Benno, Ritsuko Kihara, Tetsuya Imai
Publikováno v:
Microbial Ecology in Health and Disease; Vol 12, No 2 (2000)
Effect of yogurt (LKM512 yogurt) prepared Bifidobacterium lactis LKM 512, Lactobacillus delbrueckii subsp. bulgaricus LKM 1759 and Streptococcus thermophilus LKM 1742 on fecal microflora in 11 volunteers (six males and five females, average age 76.9
Autor:
Takeshi Nakayama, Keiichi Yoshida, Masataka Kato, K. Koda, Y. Kouro, Kazunori Furusawa, I. Kanamitsu, N. Ajika, Hideaki Kurata, N. Miyamoio, K. Kobayashi, A. Hosogane, S. Kubono, Hitoshi Kume, Toshiaki Nishimoto, Atsushi Nozoe, Tetsuya Tsujikawa, Hiroaki Kotani
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1544-1550
A 256-Mb flash memory is fabricated with a 0.25-/spl mu/m AND-type memory cell and 2-bit/cell multilevel technique on a 138.6-mm/sup 2/ die. Parallel decoding of four memory threshold voltage levels to 2-bit logical values prevents throughput degrada
Autor:
Hitoshi Kume
Publikováno v:
TRENDS IN THE SCIENCES. 4:46-50