Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hitoshi Kosugi"'
Autor:
Hitoshi Kosugi, Ihsan Simms, Antonio Rotondaro, Derek W. Bassett, Tetsuya Sakazaki, Trace Hurd
Publikováno v:
ECS Transactions. 92:127-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd51d4d59d632252d84d39736551c7b5
https://doi.org/10.1149/09202.0127ecst
https://doi.org/10.1149/09202.0127ecst
Autor:
Tetsuya Sakazaki, Hitoshi Kosugi, Derek W Bassett, Ihsan Simms, Antonio Rotondaro, Trace Hurd
Publikováno v:
ECS Meeting Abstracts. :1108-1108
Semiconductor technology is currently facing the challenge of processing structures with nanometer scale openings and high aspect ratios (HAR) in order to enable the manufacture of 3D nano-devices like FINFETs, 3D-NAND cells and DRAM capacitors. Simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::919c1a1076687ead0d750d7200b79a90
https://doi.org/10.1149/ma2019-02/23/1108
https://doi.org/10.1149/ma2019-02/23/1108
Autor:
Shinichiro Kawakami, Ali Mokhberi, Jason Sweis, Seiji Nagahara, Masami Aoki, Andrew Cross, Benjamen M. Rathsack, Tadatoshi Tomita, Hitoshi Kosugi, Takahiro Kitano, Makoto Muramatsu, Venkat Nagaswami, Ryota Harukawa
Publikováno v:
SPIE Proceedings.
This paper discusses the defect density detection and analysis methodology using advanced optical wafer inspection capability to enable accelerated development of a DSA process/process tools and the required inspection capability to monitor such a pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ac50d7c4487154f2152257e6ff6e97
https://doi.org/10.1117/12.2011177
https://doi.org/10.1117/12.2011177
Autor:
Koichi Matsunaga, Jan Hermans, Takeshi Shimoaoki, Hideo Shite, Dieter Van den Heuvel, Hitoshi Kosugi, Philippe Foubert, Eric Hendrickx, Anne-Marie Goethals, Kathleen Nafus
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
To make sure a baseline process will be ready for the evaluation of the NXE:3300, imec evaluates promising new EUV resist materials with regards to imaging, process window and line width roughness (LWR) performance. From those screening evaluations,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6567253f2b15e1d22aed194ed071864b
https://doi.org/10.1117/12.2011514
https://doi.org/10.1117/12.2011514
Autor:
Koichi Matsunaga, Hideo Shite, Jan Hermans, D. Van den Heuvel, Eric Hendrickx, Kathleen Nafus, Philippe Foubert, Hitoshi Kosugi, Mieke Goethals
Publikováno v:
SPIE Proceedings.
Previously, fundamental evaluations of the Extreme Ultra Violet (EUV) lithography process have been conducted using the CLEAN TRACK ACT™ 12 coater/developer with the ASML EUV Alpha Demo Tool (ADT) at imec. In that work, we confirmed the basic proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7542f7449fb5e1f92fe603faad412cb
https://doi.org/10.1117/12.916388
https://doi.org/10.1117/12.916388
Autor:
Jan Hermans, Hideo Shite, Neil Bradon, Hitoshi Kosugi, Eric Hendrickx, Takeshi Shimoaoki, Mieke Goethals, Roel Gronheid, Philippe Foubert, Shinji Kobayashi, Kathleen Nafus, Christiane Jehoul
Publikováno v:
SPIE Proceedings.
In order to further understand the processing sensitivities of the EUV resist process, TEL and imec have continued their collaborative efforts. For this work, TEL has delivered and installed the state of the art, CLEAN TRACK™ LITHIUS Pro™ -EUV co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff29d8c18f5b26d148f202780f8ffe7
https://doi.org/10.1117/12.879406
https://doi.org/10.1117/12.879406
Autor:
Han-Ku Cho, Hiroshi Marumoto, Hitoshi Kosugi, Carlos Fonseca, Hai-Sub Na, Cheolhong Park, Cha-Won Koh, Kyoungyong Cho, Hyun-Woo Kim, Fumiko Iwao, Chang-min Park
Publikováno v:
SPIE Proceedings.
EUV lithography is one of the most promising technologies for the fabrication of beyond 30nm HP generation devices. However, it is well-known that EUV lithography still has significant challenges. A great concern is the change of resist material for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::145c947ae7d2d5a034f8559c69ea1ec5
https://doi.org/10.1117/12.878730
https://doi.org/10.1117/12.878730
Autor:
Joerg Mallmann, Kathleen Nafus, Rik Vangheluwe, S. Wang, I. Lamers, Coen Verspaget, Masashi Enomoto, Raymond Maas, Takeshi Shimoaoki, H. Marumoto, E. van der Heijden, Hitoshi Kosugi, N. Nakashima, K. Tsutsumi, P. Derwin
Publikováno v:
SPIE Proceedings.
In this paper we summarize our investigations into processing capability on the CLEAN TRACK TM LITHIUS Pro TM - i & TWINSCAN TM NXT:1950i litho cluster. Process performance with regards to critical dimension (CD) uniformity and defectivity are invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21840e96ae204e03ebdb408616d53356
https://doi.org/10.1117/12.879380
https://doi.org/10.1117/12.879380
Autor:
Kathleen Nafus, Takeshi Shimoaoki, Joerg Mallmann, S. Wang, H. Marumoto, E. van der Heijden, Coen Verspaget, Hitoshi Kosugi, Masashi Enomoto, Raymond Maas
Publikováno v:
SPIE Proceedings.
This work is the summary of improvements in processing capability implemented and tested on the LITHIUS ProTM -i / TWINSCANTM XT:1950Hi litho cluster installed at ASML's development clean room at Veldhoven, the Netherlands. Process performance with r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e993cd78f39c84ab3f91642343a6bae
https://doi.org/10.1117/12.846523
https://doi.org/10.1117/12.846523
Autor:
Eishi Shiobara, Yukiko Kikuchi, Daisuke Kawamura, Keiichi Tanaka, Takayuki Toshima, Junichi Kitano, Hitoshi Kosugi, Shinichi Ito
Publikováno v:
SPIE Proceedings.
This paper reports the extracted risk issues on practical EUV resist processes and discusses verifications of them. The risk issues were extracted with emphasis on critical dimension, defectivity and productivity for mass production EUV resist proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e75e4e6b05596c6f4de22953be1729
https://doi.org/10.1117/12.846260
https://doi.org/10.1117/12.846260