Zobrazeno 1 - 10 of 21 pro vyhledávání: '"Hitoshi Kijima"'
1
Lightning Protection for Mobile Phone Base Stations by Combining λ/4 Short Stub and λ/4 Open Stub
Autor: Hitoshi Kijima, Chikashi Okabayashi
Publikováno v: WSEAS TRANSACTIONS ON COMMUNICATIONS. 19:249-255
This paper describes lightning protection for mobile phone base stations by combining quarter wave short and open stubs. MPBS (Mobile Phone Base Stations) have antenna towers and are often installed on the top of mountains. Therefore they have a high
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd3741af717912b3478d7b3245ee756a
https://doi.org/10.37394/23204.2020.19.29
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2
A Study on coupling Coefficients Between Adjacent Earth Systems
Autor: Chikashi Okabayashi, Hitoshi Kijima, Koji Yoshida
Publikováno v: WSEAS TRANSACTIONS ON COMMUNICATIONS. 19:186-194
This paper proposes a calculation method and a measurement method of coupling coefficients between adjacent earth systems. We consider the different earth systems which are installed nearby. An abnormal current such as a power fault current flowing i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5c0aae68b4fcb00f76d57bbc8bb9efb4
https://doi.org/10.37394/23204.2020.19.21
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3
Newly developed Compact Isolation Transformers for Signaling Networks
Autor: Hitoshi Kijima, Chikashi Okabayashi
Publikováno v: WSEAS TRANSACTIONS ON COMMUNICATIONS. 19:179-185
This paper describes the specifications of newly developed compact isolation transformers for signaling networks such as telecommunication installations and information installations. These networks can use isolation transformers to mitigate surges o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7aa0e1023f4f6b0109dc67e45fb816ec
https://doi.org/10.37394/23204.2020.19.20
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10
Deep-Trench Etching for Chip-to-Chip Three-Dimensional Integration Technology
Autor: Hirokazu Kikuchi, Hitoshi Kijima, Takafumi Fukushima, Yusuke Yamada, Mitsumasa Koyanagi
Publikováno v: Japanese Journal of Applied Physics. 45:3024-3029
Deep-Si-trench etching was investigated to establish chip-to-chip three-dimensional (3D) integration technology where completed two-dimensional (2D) LSI chips fabricated using standard complementary metal oxide semiconductor (CMOS) technology can be
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6bb4c7a4c0b202fe2ff7cf2c857f28f
https://doi.org/10.1143/jjap.45.3024
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