Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hitoo Iwasa"'
Publikováno v:
Open Physics, Vol 7, Iss 2, Pp 227-231 (2009)
The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1a377b2b399a167dc06f4f31c074c4a
https://doaj.org/article/faf59db31c014e78a2447226c4de85ee
https://doaj.org/article/faf59db31c014e78a2447226c4de85ee
Publikováno v:
Applied Surface Science. 254:3667-3671
3C–SiC(0 0 1) surfaces are considerably rough with the roughness root mean square value (Rms) of 1.3 nm, but the surfaces become considerably smooth (i.e., Rms of 0.5 nm) by heat treatment in pure hydrogen at 400 °C. Two-step nitric acid (HNO3) ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd9cc194cd58177298bc4f35b4ce6f5e
https://doi.org/10.1016/j.apsusc.2007.10.102
https://doi.org/10.1016/j.apsusc.2007.10.102
Autor:
Yueh-Ling Liu, Shigeki Imai, Masao Takahashi, Hikaru Kobayashi, Naozumi Fujiwara, Hitoo Iwasa
Publikováno v:
Surface Science. 600:1165-1169
A Si cleaning method has been developed by use of potassium cyanide (KCN) dissolved in methanol. When silicon dioxide (SiO2)/Si(1 0 0) specimens with 1014 atom/cm2 order copper (Cu) contaminants are immersed in 0.1 M KCN solutions of methanol at 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70e0230940a571e6b2ac3390a65aa1c
https://doi.org/10.1016/j.susc.2006.01.017
https://doi.org/10.1016/j.susc.2006.01.017
Publikováno v:
Solid State Communications. 137:263-267
Absract Hydrogen cyanide (HCN) aqueous solutions are found to possess a great ability of removal of copper contaminants on Si as well as a Si defect passivation effect. Copper (Cu) contaminants of 10 13 cm −2 order concentrations can be reduced bel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06db15440b52d370af5c2bdf109fdc4
https://doi.org/10.1016/j.ssc.2005.11.027
https://doi.org/10.1016/j.ssc.2005.11.027
Publikováno v:
Surface Science. 547:275-283
Spectroscopic and electrical properties of ultrathin silicon dioxide (SiO2) layers formed with nitric acid have been investigated. The leakage current density of the as-grown SiO2 layers of 1.3 nm thickness is high. The leakage current density is gre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6ff97945056db7e09769617c1552f1
https://doi.org/10.1016/j.susc.2003.09.016
https://doi.org/10.1016/j.susc.2003.09.016
Publikováno v:
Journal of Applied Physics. 94:7328-7335
Ultrathin silicon dioxide (SiO2) layers with excellent electrical characteristics can be formed using the nitric acid oxidation of Si (NAOS) method, i.e., by immersion of Si in nitric acid (HNO3) solutions. The SiO2 layer formed with 61 wt % HNO3 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::155b11b5fb0f7781ea3ff75e45efac6b
https://doi.org/10.1063/1.1621720
https://doi.org/10.1063/1.1621720
Publikováno v:
Surface Science. 542:244-252
Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN − ions with interface states to form Si–CN bonds. X-ray photoelectron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bb3ea6ca7c7bf4afc88e8402398bd5f
https://doi.org/10.1016/s0039-6028(03)00985-3
https://doi.org/10.1016/s0039-6028(03)00985-3
Autor:
Hitoo Iwasa
Publikováno v:
SHINKU. 6:228-238
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce415747600d96430303c0fb6b82632
https://doi.org/10.3131/jvsj.6.228
https://doi.org/10.3131/jvsj.6.228
Publikováno v:
Journal of the Mass Spectrometry Society of Japan. 1959:48-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45c2fb91a2029d2185d87c8f8a076d17
https://doi.org/10.5702/massspec1953.1959.13_48
https://doi.org/10.5702/massspec1953.1959.13_48
Publikováno v:
Japanese Journal of Applied Physics. 7:96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd12ec0f65181fc9cb3ba0c304e908b9
https://doi.org/10.1143/jjap.7.96
https://doi.org/10.1143/jjap.7.96