Zobrazeno 1 - 10
of 449
pro vyhledávání: '"Hitchcock, Adam P."'
Autor:
Vijayakumar, Jaianth, Yuan, Hao, Mille, Nicolas, Stanescu, Stefan, Swaraj, Sufal, Favre-Nicolin, Vincent, Najafi, Ebrahim, Hitchcock, Adam P., Belkhou, Rachid
Spectro-ptychography offers improved spatial resolution and additional phase spectral information relative to that provided by scanning transmission X-ray microscopes (STXM). However, carrying out ptychography at the lower range of soft X-ray energie
Externí odkaz:
http://arxiv.org/abs/2301.08982
Publikováno v:
In Journal of Electron Spectroscopy and Related Phenomena August 2024 274
Publikováno v:
In Chemical Engineering Journal 1 March 2024 483
Autor:
Zhang, Chunyang, Mille, Nicolas, Eraky, Haytham, Stanescu, Stefan, Swaraj, Sufal, Belkhou, Rachid, Higgins, Drew, Hitchcock, Adam P.
Publikováno v:
In Cell Reports Physical Science 15 November 2023 4(11)
Autor:
Hitchcock, Adam P.
Publikováno v:
In Journal of Electron Spectroscopy and Related Phenomena July 2023 266
Autor:
Zhang, Chunyang, Chen, Jiatang, Yuan, Hao, Wang, Jian, Sun, Tianxiao, Higgins, Drew, Hitchcock, Adam P.
Publikováno v:
In Journal of Electron Spectroscopy and Related Phenomena July 2023 266
Akademický článek
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Autor:
Leontowich, Adam F. G., Berg, Russ, Regier, Chris N., Taylor, Darwin M., Wang, Jian, Beauregard, Denis, Geilhufe, Jan, Swirsky, John, Wu, Juan, Karunakaran, Chithra, Hitchcock, Adam P., Urquhart, Stephen G.
Publikováno v:
Rev. Sci. Instrum. 89 (2018) 093704
A cryo scanning transmission X-ray microscope, the cryo-STXM, has been designed and commissioned at the Canadian Light Source synchrotron. The instrument is designed to operate from 100 - 4000 eV (lambda = 12.4 - 0.31 nm). Users can insert a previous
Externí odkaz:
http://arxiv.org/abs/1808.05702
Publikováno v:
Microscopy & Microanalysis; 2024 Supplement, Vol. 30, p1-4, 4p
Autor:
Carta, Daniela, Hitchcock, Adam, Guttmann, Peter, Regoutz, Anna, Khiat, Ali, Serb, Alexantru, Gupta, Isha, Prodromakis, Themistoklis
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of su
Externí odkaz:
http://arxiv.org/abs/1507.06588