Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hisu-Chih Chen"'
Autor:
M. Miura, T.-Z. Hong, C.-J. Tsai, X.-R. Yu, Y.-T. Huang, Y. Chuang, Hiroyuki Ishii, Seiji Samukawa, Chia-Min Lin, G.-L. Luo, C.-J. Su, Jiun-Yun Li, Kuo-Hsing Kao, T.-Y. Chu, Tatsuro Maeda, Po-Jung Sung, W. C.-Y. Ma, H.-Y. Chao, Ta-Chun Cho, Hisu-Chih Chen, W.-H. Chang, Guo-Wei Huang, N.-C. Lin, S.-M. Luo, Kun-Lin Lin, Jia-Min Shieh, Toshifumi Irisawa, K.-P. Huang, Fu-Kuo Hsueh, Chien-Ting Wu, Jianqing Lin, C.-Y. Yang, W.-F. Wu, S.-T. Chung, J.-H. Tarng, Tien-Sheng Chao, Ricky W. Chuang, Darsen D. Lu, Yeong-Her Wang, Yao-Jen Lee, A. Agarwal, Yiming Li, M.-J. Li, Wen-Kuan Yeh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85a6f84bd690a0af5c9400f93a632
https://doi.org/10.1109/iedm13553.2020.9372001
https://doi.org/10.1109/iedm13553.2020.9372001
Autor:
Yu-Chi Lu, Wen-Kuan Yeh, Fu-Ju Hou, Po-Jung Sung, Bo-Yuan Chen, Yiming Li, Tien-Sheng Chao, Hisu-Chih Chen, Seiji Samukawa, Fu-Kuo Hsueh, Wei-You Yuan, Chien-Ting Wu, Kun-Lin Lin, Shang-Shiun Chuang, Wen-Fa Wu, Jiun-Yun Li, Yao-Jen Lee, Tseung-Yuen Tseng, Jay-Yi Yao, Henry J. H. Chen, Tuo-Hung Hou, Guo-Wei Huang, Kuo-Hsing Kao
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge09Si01 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::070ec81da6d4449c78dfa1db535a9573
https://doi.org/10.1109/iedm.2015.7409701
https://doi.org/10.1109/iedm.2015.7409701
Autor:
Wen-Kuan Yeh, Chih-Chao Yang, Fu-Liang Yang, Wei-Hao Chen, Tsung-Ta Wu, Yu-Shao Shiao, Jia-Min Shieh, Hisu-Chih Chen, Guo-Wei Huang, Hsing-Hsiang Wang, Chao-Shun Yang, Fu-Kuo Hsueh, Ting-Jen Hsueh, Kai-Shin Li, Bo-Yuan Chen, Tung-Ying Hsieh, Chien-Fu Chen, Meng-Fan Chang, Chang-Hong Shen, Wen-Hsien Huang
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
For the first time, a CO2 far-infrared laser annealing (CO2-FIR-LA) technology was developed as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d45fca9bda1fcd52b5cda3377d9183
https://doi.org/10.1109/iedm.2015.7409765
https://doi.org/10.1109/iedm.2015.7409765