Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Hisham Z. Massoud"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
The local value distributions of the effective contact potential difference (ECPD or the φMS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A~modification of the photoelectric φMS measurement method was de
Externí odkaz:
https://doaj.org/article/b6154fb1e036467197c6c95b03d1a916
Publikováno v:
Journal of Computational Electronics. 7:337-341
In this paper, we developed an efficient three-dimensional (3-D) nanoelectronic device simulator based on a self-consistent Schrodinger-Poisson solver to simulate quantum transport. An efficient and fast algorithm, the spectral element method (SEM),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23bfe6efa8189046a9d0f8430905f5f7
https://doi.org/10.1007/s10825-008-0204-8
https://doi.org/10.1007/s10825-008-0204-8
Autor:
Hisham Z. Massoud
Publikováno v:
ECS Transactions. 2:189-203
In this paper, the growth kinetics and electrical properties of ultrathin silicon-dioxide layers are reviewed. Topics discussed here include the onset of oxide growth, the effects of temperature, substrate orientation, dopant type and concentration,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0fe4d138be9ba79e54be9fc6bfdaf2
https://doi.org/10.1149/1.2195659
https://doi.org/10.1149/1.2195659
Publikováno v:
Journal of Computational Electronics. 3:417-421
A novel fast spectral element method (SEM) with exponential accuracy for the self-consistent solution of the Schrodinger-Poisson system has been developed for the simulation of semiconductor nanodevices. Gauss-Lobatto-Legendre polynomials were used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b7cd2a93e53487cd78d8f5b362a032
https://doi.org/10.1007/s10825-004-7088-z
https://doi.org/10.1007/s10825-004-7088-z
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 23:1200-1208
A spectral-domain method is described for solving Schrodinger's equation based on the multidomain pseudospectral method and boundary patching. The computational domain is first divided into nonoverlapping subdomains. Using the Chebyshev polynomials t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c38265df051d6b421742ac123bb064
https://doi.org/10.1109/tcad.2004.831592
https://doi.org/10.1109/tcad.2004.831592
Publikováno v:
Microelectronic Engineering. 72:165-173
The lateral distribution of the effective contact potential difference (ECPD or φMS) was determined experimentally for the first time over the gate area of metal-oxide-semiconductor (MOS) structures. The photoelectric method for measuring φMS in MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b1fa39efe5fc2a3e09018a0b5cac21
https://doi.org/10.1016/j.mee.2003.12.031
https://doi.org/10.1016/j.mee.2003.12.031
Publikováno v:
Journal of Applied Physics. 92:2198-2201
In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the electrical properties of metal/oxide/semiconductor devices. In this study, we have experimentally characterized the dependence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae3d168b6b0359820a3e8f254b2e8a0
https://doi.org/10.1063/1.1489499
https://doi.org/10.1063/1.1489499
Publikováno v:
Journal of Applied Physics. 92:2202-2206
In this article, we report the results of a study of the effects of high-temperature stress annealing in nitrogen on the index of refraction of SiO2 layers in metal/oxide/semiconductor (MOS) devices. In this study, we have experimentally characterize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e398dbac26fa9b5ff8488c2b1baa4e
https://doi.org/10.1063/1.1489500
https://doi.org/10.1063/1.1489500
Autor:
K. Henson, Hisham Z. Massoud, Jim J. Wortman, M. R. Mirabedini, A. Acker, Jay Hauser, A. Shanware, V. Z. Q. Li
Publikováno v:
Microelectronic Engineering. 48:39-42
The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb744f9084f30ac24ccfeaae932d6d9e
https://doi.org/10.1016/s0167-9317(99)00333-0
https://doi.org/10.1016/s0167-9317(99)00333-0
Publikováno v:
Microelectronic Engineering. 48:295-298
Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b5312b607e2d7509b09112eb94a38ee
https://doi.org/10.1016/s0167-9317(99)00392-5
https://doi.org/10.1016/s0167-9317(99)00392-5