Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Hisayuki Shimada"'
Publikováno v:
IEEE Transactions on Electron Devices. 48:1619-1626
A tantalum nitride (TaNx) metal gate complementary metal oxide semiconductor (CMOS) technology using low-resistivity (/spl sim/15 /spl mu//spl Omega/cm), bcc (body-centered-cubic)-phase tantalum metal layer has been developed, featuring low-temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930f83bb005ac8e514ec192921e91692
https://doi.org/10.1109/16.936572
https://doi.org/10.1109/16.936572
Publikováno v:
IEEE Transactions on Electron Devices. 44:1467-1472
A reliable tantalum (Ta)-gate device technology, which can drastically reduce the number of process steps, has been developed. Ta-gate fully-depleted-silicon-on-insulator (FDSOI) MOSFETs with 0.15-/spl mu/m gate length by low-temperature processing b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a58fc09f9454d00b4287d9ad6f111aae
https://doi.org/10.1109/16.622603
https://doi.org/10.1109/16.622603
Publikováno v:
IEEE Transactions on Electron Devices. 44:1903-1907
The threshold voltages of thin-film fully-depleted silicon-on-insulator (FDSOI) nMOS and pMOS have been controlled by employing tantalum (Ta) as the gate materials. Ta-gate FDSOI MOSFET's have excellent threshold voltage control for 1.0 V application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a66593dd09cf4a059b400d101a06ddd
https://doi.org/10.1109/16.641359
https://doi.org/10.1109/16.641359
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7(3):389-393
The resolution enhancement of contact-hole resist patterns featuring precise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of surfactant improves the wettability of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::857c1e5ba2250353388c9fb9e047b30d
http://hdl.handle.net/10097/48008
http://hdl.handle.net/10097/48008
Publikováno v:
Journal of The Electrochemical Society. 141:192-205
The surface of positive photoresist is hardened by the ion implantation process and becomes very difficult to remove thereafter. To investigate this phenomenon, the following aspects of photoresist were investigated: (i) the effectiveness of low‐en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913f8d28f2a8cbdc6c642a148fa19a42
https://doi.org/10.1149/1.2054683
https://doi.org/10.1149/1.2054683
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 6:269-273
Addition of appropriate surfactant to developer will improve wettability of the developer, thus promoting uniformity of dissolution of exposed photoresist. Surface smoothness of the Si substrate is also improved when developer contains surfactant. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::812c3e5a3e587788885ee4be07d90434
https://doi.org/10.1109/66.238177
https://doi.org/10.1109/66.238177
Publikováno v:
Journal of The Electrochemical Society. 139:1721-1730
The addition of small amounts of surfactant and hydrogen peroxide (H 2 O 2 ) to the developer is shown to improve the performance of the photoresist development process. Exposed photoresist areas are dissolved more uniformly, the smoothness of Si sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00157985d74574f6f21b938769daf1c1
https://doi.org/10.1149/1.2069483
https://doi.org/10.1149/1.2069483
Publikováno v:
Proceedings of International Electron Devices Meeting.
The threshold voltages of n-channel and p-channel thin-film Si-on-Insulator (SOI) MOSFETs have been controlled by employing Tantalum (Ta) for gate materials in 1 V applications. The threshold voltage control in SOI MOSFETs by the work function of gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb2c0a068662a13ac70ad6d74cfc8bdb
https://doi.org/10.1109/iedm.1995.499357
https://doi.org/10.1109/iedm.1995.499357
Autor:
Tadahiro Ohmi, Hisayuki Shimada
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
Since the interconnect capacitance almost maintains the same level even with shrinking device dimension, high current drive of a transistor is required for ultra-high speed operation. Although the ultra-thin SOI MOSFET is a promising candidate for ul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3293ae6b7333663b552bd75536066614
https://doi.org/10.1109/soi.1995.526479
https://doi.org/10.1109/soi.1995.526479
Publikováno v:
1995 IEEE International SOI Conference Proceedings.
In this paper it is successfully demonstrated that Ta-gate SOI MOSFETs have excellent threshold voltage control in 1V applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4321a0002d3ae9e0ad823930e19b4d
https://doi.org/10.1109/soi.1995.526478
https://doi.org/10.1109/soi.1995.526478