Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Hisayuki Higuchi"'
Autor:
Hisayuki Higuchi, Takahide Ikeda
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 84:20-28
Autor:
Koichiro Ishibashi, N. Hashimoto, Toshinobu Shimbo, Kenji Shiozawa, S. Ikeda, Hisayuki Higuchi, Kunio Uchiyama
Publikováno v:
Analog Integrated Circuits and Signal Processing. 20:85-94
There are various kinds of analog CMOS circuits in microprocessors. IOs, clock distribution circuits including PLL, memories are the main analog circuits. The circuit techniques to achieve low power dissipation combined with high performance in newes
Autor:
Y. Nakagome, Toshiaki Yamanaka, Katsuro Sasaki, K. Takasugi, Hisayuki Higuchi, Suguru Tachibana
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:487-490
The dual-sensing-latch circuit proposed here can solve the synchronization problem of the conventional wave-pipelined SRAM and the proposed source-biased self-resetting circuit reduces both the cycle and access time of cache SRAM's. A 16-kb SRAM usin
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 74:78-89
The following results have been obtained by evaluating the circuit delay times of submicron BiCMOS, CMOS, and ECL gates by the same criterion: (1) analytical relationships to represent the delay time of each circuit by device parameters have been dev
Autor:
Hisayuki Higuchi, Keijiro Uehara
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 74:102-110
Transistor structures suitable for high-speed bipolar LSIs have been examined and OSET (outside emitter technology) transistors which enable an emitter region more than three times larger for the same base area are proposed. The feature of this trans
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 73:10-20
High integration density and high-speed operation are obtainable by miniaturization of bipolar LSI devices. In modern bipolar integrated transistors, an undesired current flows into the substrate due to the parasitic sub-PNP transistor. For example,
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 110:219-227
Autor:
Hisayuki Higuchi
Publikováno v:
AIP Conference Proceedings.
We developed a 1/f fluctuation model that is based on the random walks of several particles in a one‐dimensional bar. We showed that the random walks in a bar of finite length could be treated as those in a bar of infinite length. This finding shou
Autor:
Hisayuki Higuchi, Shuuichi Miyaoka, Suzuki Makoto, T. Ikeda, Masanori Odaka, Katsumi Ogiue, Mitsuru Hirao
Publikováno v:
1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A 64K×1 ECL RAM using 1.3μm bipolar-CMOS technology including bipolar transistor with a 7GHz cutoff frequency will be presented. Variable impedance and equalizing circuitry permit 7ns access time. Power dissipation is 350mW.
Publikováno v:
AIP Conference Proceedings.
We propose a 1/f temperature fluctuation model, based on the random walk of a phonon in solids. When the phonon reaches the boundary of the solid, it is absorbed by the boundary. Thus, the statistical characteristics of the absorbed phonon follow the