Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Hisato Michikoshi"'
Autor:
Yasuki Mikamura, Takeyoshi Masuda, Hisato Michikoshi, Shinsuke Harada, Tomoaki Hatayama, Yu Saito
Publikováno v:
Materials Science Forum. 1004:758-763
A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a15c4ea4b7058b6e22e73733babfc34
https://doi.org/10.4028/www.scientific.net/msf.1004.758
https://doi.org/10.4028/www.scientific.net/msf.1004.758
Autor:
Hidenori Kitai, Hisato Michikoshi, Kunihiro Sakamoto, Akira Tokuchi, Tatsuya Kaito, Ken Takayama, Katsuya Okamura, Daiki Kumamoto, Fujio Naito
Publikováno v:
Materials Science Forum. 1004:1141-1147
To resolve the drawback of conventional thyratron switches, development of a semiconductor high voltage switch utilizing a 13 kV class SiC-MOSFET developed by Tsukuba Power Electronics Constellations (TPEC) is proceeding. At first, the device evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8bef0a2ac407e9ed6e8aeb11a01969
https://doi.org/10.4028/www.scientific.net/msf.1004.1141
https://doi.org/10.4028/www.scientific.net/msf.1004.1141
Publikováno v:
Materials Science Forum. 963:851-854
This study developed two types full SiC half bridge power module, which consist of IEMOS (Implantation Epitaxial MOSFET / Planer structure) or VMOS (V-groove trench MOSFET / Trench structure). The switching loss and conduction loss of the power modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8050c81bb6e3ccbe848487514099e4ae
https://doi.org/10.4028/www.scientific.net/msf.963.851
https://doi.org/10.4028/www.scientific.net/msf.963.851
Publikováno v:
Materials Science Forum. 924:832-835
This paper develops 1200V, 50A full SiC half bridge power module, which embeds C snubber and gate resistors. Embedded C snubber suppresses surge voltage in fast switching operation, and gate resistors avoid gate oscillation of parallel connected SiC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83219b5a2b836787c4d837de39ce768a
https://doi.org/10.4028/www.scientific.net/msf.924.832
https://doi.org/10.4028/www.scientific.net/msf.924.832
Autor:
K. Hiratsuka, Hisato Michikoshi, Shinsuke Harada, Takeyoshi Masuda, Hideto Tamaso, Yasuki Mikamura, H. Notsu, Y. Saitoh
Publikováno v:
Materials Science Forum. 897:505-508
We developed V-groove trench gate SiC MOSFETs with grounded buried p+ regions. An effective reduction can be seen in the feedback capacitance (Crss) of static characteristics, and a fast switching performance was achieved. The grounded buried p+ regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86ee2389667e29cfb67e00c714007410
https://doi.org/10.4028/www.scientific.net/msf.897.505
https://doi.org/10.4028/www.scientific.net/msf.897.505
Autor:
Noriyuki Kimura, Hisato Michikoshi, Masahito Tsuno, Hideki Omori, Naoki Mukaiyama, Toshimitsu Morizane, Aoto Yamamoto, Kenji Fukuda
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
This paper deals with attractive bidirectional HF converter as transmitter and receiver of Wireless Power Transfer (WPT) for vehicle to home (V2H) / Building (V2B) / Community (V2C) smart energy management architecture. A new type of bidirectional WP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2910c9d545d152e6000d952f6122e798
https://doi.org/10.23919/ipec.2018.8507513
https://doi.org/10.23919/ipec.2018.8507513
Autor:
Keiji Wada, Satomi Itoh, Hisato Michikoshi, Takahiro Sugimura, Hideto Tamaso, Toru Hiyoshi, Takashi Tsuno, Jun Genba, Hitoki Tokuda, Yasuki Mikamura, Shigenori Toyoshima, Kenji Kanbara
Publikováno v:
Materials Science Forum. :592-595
Characteristics of SiC MOSFETs and SBDs with 3.3 kV-class have been presented. Static Characteristics of the MOSFET showed a specific on-resistance of 14.2 mΩ cm2. A breakdown voltage of 3850 V is obtained by using the dose optimized edge terminatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36dabff9260d41783edb732b9d2b6ee7
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
https://doi.org/10.4028/www.scientific.net/msf.821-823.592
Autor:
Hisato Michikoshi, Takeyoshi Masuda, Kenji Hiratsuka, So Tanaka, Toru Hiyoshi, Keiji Wada, Takashi Tsuno, Jun Genba, Takeshi Sekiguchi, Yasuki Mikamura, Taku Horii
Publikováno v:
IEEE Transactions on Electron Devices. 62:382-389
Two types of 4H-silicon carbide (SiC) MOSFETs are proposed in this paper. One is the novel designed V-groove trench MOSFET that utilizes the 4H-SiC (0-33-8) face for the channel region. The MOS interface using this face shows the extremely low interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5063ebc5e097d04aecdbe59e0df1e2dc
https://doi.org/10.1109/ted.2014.2362537
https://doi.org/10.1109/ted.2014.2362537
Autor:
Toshimitsu Morizane, Hideki Omori, Noriyuki Kimura, Mutsuo Nakaoka, Hisato Michikoshi, Kenji Fukuda, Aoto Yamamoto
Publikováno v:
2017 19th International Conference on Electrical Drives and Power Electronics (EDPE).
This paper deals with a cost effective wireless EV battery charger which integrates the simplest quasi-resonant soft switching pulse modulated inverter with a newly developed SiC-MOSFET. In the first place, the operating principle of a wireless EV ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d182c3f2d285f89a332b178d019615c
https://doi.org/10.1109/edpe.2017.8123259
https://doi.org/10.1109/edpe.2017.8123259
Autor:
Toshimitsu Morizane, Hisato Michikoshi, Noriyuki Kimura, Saad Mekhilef, Kodai Kuroda, Hideki Omori, Kenji Fukuda, Mutsuo Nakaoka
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
This paper deals with attractive voltage-source single-ended sub-resonant HF inverter as a simple wireless power transfer (WPT) based on unidirectional IPT in addition to Dual Active HF inverter and HF rectifier as transmitter and receiver of WPT is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb5d4e99772a953bc09ea82549aa427
https://doi.org/10.1109/ifeec.2017.7992054
https://doi.org/10.1109/ifeec.2017.7992054