Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

Autor: Sang-wuk Park, Keizo Kinoshita, Kenji Ishikawa, Silvia Armini, Gottlieb S. Oehrlein, Tatsuru Shirafuji, Keren J. Kanarik, Yasuhiro Morikawa, Richard A. Gottscho, Hisataka Hayashi, Tatsuo Ishijima, Nathan P. Marchack, Gert J. Leusink, Emilie Despiau-Pujo, Takahide Murayama

Publikováno v: Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca17bb5242eaeeee079b4e77984bcef
https://hal.univ-grenoble-alpes.fr/hal-02337524

Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices

Autor: Hisataka Hayashi, Tsubasa Imamura, Itsuko Sakai, Makoto Sekine, Masaru Hori

Publikováno v: Japanese Journal of Applied Physics. 60:036001

The present study investigates the cyclic etching of TiO2 with CF polymer deposition and removal. We find that C4F8 plasma treatment forms a CF polymer deposition layer on the TiO2 and a modified TiO2 surface under the CF polymer layer. Subsequent O2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::25b51ab9990575f30f074888a3e56dee
https://doi.org/10.35848/1347-4065/abdf78

Silver film etching using halogen gas plasma

Autor: Makoto Sekine, Kenichi Yoshikawa, Kazuhito Furumoto, Hisataka Hayashi, Itsuko Sakai, Toshiyuki Sasaki, Masaru Hori

Publikováno v: Journal of Vacuum Science & Technology A. 38:053006

Silver (Ag) film etching was studied with a focus on suppressing the surface roughness induced by Cl2 and CF4 plasmas. After Cl2 plasma etching, roughening of the Ag surface was observed. From in situ x-ray photoelectron spectroscopy and atomic force

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7337a6c61743837d28cf67d1392f39bc
https://doi.org/10.1116/6.0000286

Sub-45 nm SiO2Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma

Autor: Hisataka Hayashi, Itsuko Sakai, Akihiro Kojima, Tokuhisa Ohiwa, Keisuke Kikutani, Akio Ui, Takashi Ohashi, Junko Abe

Publikováno v: Japanese Journal of Applied Physics. 47:8026-8029

By using a stacked mask process (S-MAP) with spun-on-carbon (SOC) film, 38 nm line patterns were successfully etched by controlling the ion energy using high-bias-frequency dual-frequency-superimposed (DFS) rf capacitively coupled plasma in combinati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d759c640bdf8d674782c71e8155f792f
https://doi.org/10.1143/jjap.47.8026

A New Stacked-Mask Process Utilizing Spun-on Carbon Film for Sub-130-nm Etching

Autor: Tsuyoshi Shibata, Yasuhiko Sato, Junko Abe, Eishi Shiobara, Hisataka Hayashi, Yasunobu Onishi, Tokuhisa Ohiwa, Daizo Kishigami

Publikováno v: Japanese Journal of Applied Physics. 42:6605-6609

A novel stacked-mask process (S-MAP) was developed for sub-130-nm etching. The S-MAP consists of a tri-layer with a top layer of thin resist for patterning, a spin-on-glass (SOG) interlayer, and a newly developed spun-on carbon-film bottom layer. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd1518fd3f080d55a022f512f71fcb0f
https://doi.org/10.1143/jjap.42.6605