Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Hisashi Shichijo"'
Autor:
Hisashi Shichijo, Peng Cheng
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5169-5175
For heterojunction bipolar transistors (HBTs), the noise correlation influences the noise parameters and is therefore relevant for transistor modeling, especially at sufficiently high frequencies. In order to predict the noise correlation, it is nece
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52831183221d69885b6c2d82a3ab44ff
https://doi.org/10.1109/tmtt.2018.2873787
https://doi.org/10.1109/tmtt.2018.2873787
Publikováno v:
IRPS
Reinforced isolation provides protection of equipment and operators that interact with high voltage domains. Standards that define it have evolved over time from those that require only partial discharge to confirm reliability at the high voltage ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74915becd8d200b8d5f74c6c152bbdc
https://doi.org/10.1109/irps45951.2020.9128352
https://doi.org/10.1109/irps45951.2020.9128352
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 64:1727-1735
In this paper, a novel unified equivalent-circuit model with silicon (Si)-substrate skin-effect modeling is demonstrated to describe the performance of coplanar waveguide (CPW) lines with a wide range of dimensions and substrate resistivities, up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0269330482414f98fe47da2184cfd228
https://doi.org/10.1109/tmtt.2016.2558511
https://doi.org/10.1109/tmtt.2016.2558511
Autor:
Peng Cheng, Hisashi Shichijo
Publikováno v:
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
This paper presents the prediction of noise transit time and noise correlation of SiGe HBTs over the temperature and biasing from the HICUM compact model without any measured noise data. For SiGe HBTs, the noise correlation is critical for noise char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35407bde454895a6622ad7ead95d57af
https://doi.org/10.1109/sirf.2018.8304231
https://doi.org/10.1109/sirf.2018.8304231
Autor:
Dae Yeon Kim, Yaming Zhang, Youngwan Kim, Ehsan Afshari, Hisashi Shichijo, Ruonan Han, K. O. Kenneth
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2296-2308
Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications. Using a compact passive-pixel array architecture, a fully-integrated 280-GHz 4 × 4 imager is demonstrated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6770b3fbc70419d61d8792f09c350071
https://doi.org/10.1109/jssc.2013.2269856
https://doi.org/10.1109/jssc.2013.2269856
Autor:
Hisashi Shichijo, Peng Cheng
Publikováno v:
2016 IEEE Dallas Circuits and Systems Conference (DCAS).
This paper presents the high frequency noise characterization of bipolar and MOSFET devices over temperature. The device noise parameter calculation based on Y-parameters is utilized to compare with the results from measurement over temperature. Base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560c523a327cf6a9fda37aa7f16b0923
https://doi.org/10.1109/dcas.2016.7791130
https://doi.org/10.1109/dcas.2016.7791130
Autor:
Hisashi Shichijo, Chieh-Lin Wu, Chikuang Yu, Yang-Hun Yun, Choong-Yul Cha, Kenneth K. O, Sandeep Kshattry
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:2335-2343
Root mean square (RMS) Schottky barrier diode (SBD) detectors with detector gain of 4.6 V-1 , operating frequency range around 30-50 GHz or bandwidth greater than 20 GHz, and an area of 36 μm2 are demonstrated in 45-nm SOI CMOS. The maximum detector
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77da1569bb097d887591685a07dd2383
https://doi.org/10.1109/jssc.2012.2219155
https://doi.org/10.1109/jssc.2012.2219155
Autor:
S. Martin, Django Trombley, F. Hou, Renuka P. Jindal, V. M. Mahajan, C. Machala, P. R. Patalay, Hisashi Shichijo
Publikováno v:
IEEE Transactions on Electron Devices. 59:197-205
Experimental and simulation results of high-frequency channel noise in MOSFETs with 40-, 80-, and 110- nm gate lengths are presented. The measured dc I-V characteristics can be matched using the drift-diffusion (DD) and hydrodynamic (HD) transport mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54ec229ca843560e138500076fa9483
https://doi.org/10.1109/ted.2011.2173691
https://doi.org/10.1109/ted.2011.2173691
Extinction of random telegraph switching in small area silicon metal-oxide-semiconductor transistors
Publikováno v:
Journal of Applied Physics. 124:064504
Random telegraph switching (RTS) noise showing a slow decay in the switching rate at cryogenic temperatures which leads to the eventual extinction of the discrete noise fluctuations has been observed in the drain-source current (IDS) of small area (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07225eb9a61120278c487c5c1a87af3
https://doi.org/10.1063/1.5038546
https://doi.org/10.1063/1.5038546
Autor:
Srikanth Krishnan, H. Kufluoglu, Muhammad A. Alam, Dhanoop Varghese, D. Mosher, Vijay Reddy, Hisashi Shichijo
Publikováno v:
IEEE Transactions on Electron Devices. 54:2669-2678
Off-state degradation in drain-extended NMOS transistors is studied. Carefully designed experiments and well-calibrated simulations show that hot carriers, which are generated by impact ionization of surface band-to-band tunneling current, are respon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15fe7af5c281725734655ebe2f79ee1
https://doi.org/10.1109/ted.2007.904587
https://doi.org/10.1109/ted.2007.904587