Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hisashi Motobayashi"'
Autor:
Kung-Hsun Tsao, Hisashi Motobayashi, Katayama Tomohide, Crockett Huang, Yung-Cheng Chang, Chih-Jung Chen, Tsz-Yuan Chen, Simon Chiu, Nick Hsiao, Yu-Huan Liu, Vencent Chang, Go Noya
Publikováno v:
SPIE Proceedings.
Dual damascene technique has been widely applied to IC device fabrication in copper interconnect process. For traditional via-first dual damascene application, a fill material is first employed to fill via to protect over-etching and punch-through of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b96a60344d5a7a74ef31ccc65dfffdf
https://doi.org/10.1117/12.855997
https://doi.org/10.1117/12.855997
Autor:
Mark Neisser, Hisashi Motobayashi, Shuji S. Ding, Medhat A. Toukhy, Wen-Bing Kang, Tomohide Katayama, Joseph E. Oberlander
Publikováno v:
SPIE Proceedings.
So far the IC industry is using dyed resist and TARC for the implant layer lithography. However, this approach cannot provide the necessary CD control for the 65nm node and below. One could use organic BARC to improve CD control but the dry etching p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294b4465b4e8d3d403c2808b7e2821b7
https://doi.org/10.1117/12.537539
https://doi.org/10.1117/12.537539