Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Hisao Miyazaki"'
Publikováno v:
2021 34th International Vacuum Nanoelectronics Conference (IVNC).
We observed enhancement of thermionic emission (TE) and conversion (TC) characteristics by controlling spontaneous and piezo polarization and the band diagram of n-type AlGaN/GaN thermionic cathodes. The obtained TE current from N-polarity n-AlGaN fi
Publikováno v:
Applied Physics Express. 15:061006
We present a high-density plasma source using a hollow cathode with an axial magnetic field. The hollow cathode consists of molybdenum plates coated by polycrystalline boron-doped diamond (PBDD) with a high yield of ion-induced secondary electrons. I
Publikováno v:
2020 33rd International Vacuum Nanoelectronics Conference (IVNC).
We observed the polarity-dependent thermionic emission and conversion characteristics of Si-doped n-type GaN-based cathodes with Cs adsorbed on their surfaces. Emission current from the surface of the GaN sample with N -polarity was markedly higher t
Publikováno v:
Journal of Vacuum Science & Technology B. 39:062207
Enhanced thermionic emission (TE) and conversion characteristics are observed by controlling spontaneous and piezoelectric polarization and the band diagram of n-type AlGaN/GaN thermionic cathodes. Reduction in the electron affinity and work function
Publikováno v:
Journal of Vacuum Science & Technology B. 39:014201
We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode
Publikováno v:
Small. 7:1552-1556
Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostat
Publikováno v:
Nano Letters. 10:3888-3892
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric field; however, the resistance does not diverge even at low temperatures.
Autor:
Hisao Miyazaki, Kazuhito Tsukagoshi
Publikováno v:
TANSO. 2010:110-115
We present a review of our experiments on graphene transistors. For the preparation of graphene films on a substrate, a quick formation method is introduced in which the number of layers can be precisely confirmed. Fabrication of gate electrodes spec
Autor:
Hisao Miyazaki, A. Kanda, Takuya Moriki, S. Tanaka, Kazuhito Tsukagoshi, Hidenori Goto, S. Odaka, Youiti Ootuka, Takashi Sato, Yoshinobu Aoyagi
Publikováno v:
Physica C: Superconductivity and its Applications. 468:797-800
We experimentally studied current–voltage characteristics of superconductor/thin graphite film/superconductor Josephson junctions. A reentrant behavior in the differential conductance was observed at low bias voltages just above the structure due t
Autor:
Akinobu Kanda, Takashi Sato, Yoshinobu Aoyagi, Hisao Miyazaki, Kazuhito Tsukagoshi, Youiti Ootuka, S. Odaka, Takuya Moriki
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:241-244
We experimentally investigated electron transport in thin graphite films including tens of graphene layers. The samples were fabricated by mechanical peeling of graphite, e-beam lithography, metal deposition and lift-off. For some samples, Ar-ion bom