Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Hisao Haku"'
Autor:
Shinya Tsuda, Masao Isomura, Seiichi Kiyama, Masaki Shima, Makoto Tanaka, Kenichiro Wakisaka, Hisao Haku, Akira Terakawa
Publikováno v:
Journal of Non-Crystalline Solids. :442-446
The effects of hydrogen dilution of up to 54:1 (=H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) were investigated at substrate temperatures 10−5 Ω−1 cm−1 and silicon dihydride content (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba55a1881f8186b6cbefdc91f04c799
https://doi.org/10.1016/s0022-3093(98)00187-2
https://doi.org/10.1016/s0022-3093(98)00187-2
Autor:
Shinya Tsuda, Masao Isomura, Makoto Tanaka, Katsunobu Sayama, Hisao Haku, Kenichiro Wakisaka, Seiichi Kiyama
Publikováno v:
Solar Energy Materials and Solar Cells. 49:121-125
We have achieved a stabilized conversion efficiency of 8.9% in a single-junction a-Si solar cell and 10.6% in a double-junction a-Sia-SiGe solar cell for a size of 1 cm2, which are the world's highest values achieved so far for this size and structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a7135472a7fe0a762a925bfa0e612b
https://doi.org/10.1016/s0927-0248(97)00185-2
https://doi.org/10.1016/s0927-0248(97)00185-2
Publikováno v:
Progress in Photovoltaics: Research and Applications. 3:221-228
A new optimum design, in which the actual daily spectral data under outdoor conditions over a year were considered, was developed for the integrated tandem-type a-Si solar cell submodule with a structure of glass/TCO/a-Si: H(pinpin)/metal. It was fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::490bc8fbe584307c428069e247c32add
https://doi.org/10.1002/pip.4670030402
https://doi.org/10.1002/pip.4670030402
Autor:
Hisao Haku, Masato Nishikuni, Noboru Nakamura, Tsuyoshi Takahama, Shinya Tsuda, Hisaki Tarui, Yasuo Kishi, M. Tanaka
Publikováno v:
Solar Energy Materials. 23:227-238
The p layer is one of the key factors for improving conversion efficiency of amorphous silicon solar cells. This paper summarizes various approaches for achieving high quality p layers which are used in window layers of solar cells. Theoretical consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08103448b17f718489784054d2666405
https://doi.org/10.1016/0165-1633(91)90125-5
https://doi.org/10.1016/0165-1633(91)90125-5
Autor:
Yoshihiro Hishikawa, Noboru Nakamura, Yukinori Kuwano, Hiroshi Dohjoh, Sadaji Tsuge, Hisao Haku, Katsunobu Sayama, Kenichiro Wakisaka, Shinya Tsuda, Masao Isomura, Mikio Taguchi, Yasuo Kishi, Shoichi Nakano
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
A total area conversion efficiency of 11.1% was achieved for a 10*10 cm/sup 2/ integrated-type a-Si solar cell submodule. Approaches to improving conversion efficiency included the development of new materials, new fabrication methods, and a new devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e9c86c9e345c39ffefac87df1e2846
https://doi.org/10.1109/pvsc.1991.169409
https://doi.org/10.1109/pvsc.1991.169409
Autor:
Kenichiro Wakisaka, Shinya Tsuda, Masao Isomura, Masaki Shima, Shingo Okamoto, Hisao Haku, Eiji Maruyama, Seiichi Kiyama
Publikováno v:
MRS Proceedings. 507
The world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a38ba8f2be341c33ec8cb49e67a050
https://doi.org/10.1557/proc-507-145
https://doi.org/10.1557/proc-507-145
Autor:
Hidenori Nishiwaki, Hisao Haku, Shoichi Nakano, Yukinori Kuwano, Kunimoto Ninomiya, Hisaki Tarui, M. Tanaka, Shinya Tsuda, Noboru Nakamura, Kenichiro Wakisaka
Publikováno v:
MRS Proceedings. 242
A total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e41825a95547b30c9054acfd3c2795
https://doi.org/10.1557/proc-242-663
https://doi.org/10.1557/proc-242-663
Autor:
Noboru Nakamura, Katsunobu Sayama, Shinya Tsuda, Masao Isomura, Yukinori Kuwano, Hiroshi Dohjoh, Yasuo Kishi, Shouichi Nakano, Hisao Haku
Publikováno v:
MRS Proceedings. 219
A-SiGe: H film properties with a low impurity concentration were investigated using a super chamber in the range of Ge content of 0% to 36%. These a-SiGe films can maintain a high photosensitivity of about 106 for Ge content up to 13%, which is compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe17551dbb728d1d2930efe649fbc51
https://doi.org/10.1557/proc-219-691
https://doi.org/10.1557/proc-219-691
Autor:
Kenichiro Wakisaka, Shingo Okamoto, Masaki Shima, Shinya Tsuda, Masao Isomura, Hisao Haku, Eiji Maruyama, Seiichi Kiyama
Publikováno v:
Japanese Journal of Applied Physics. 37:6322
The effects of hydrogen dilution of up to 54:1 (=H2:SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) were investigated while keeping the optical gap (E opt) constant. It was found that deterioration of the film properties of a-SiGe:H due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c278f3bf6aa9e6fa467949f3260b70f7
https://doi.org/10.1143/jjap.37.6322
https://doi.org/10.1143/jjap.37.6322
Publikováno v:
Japanese Journal of Applied Physics. 36:262
Poly-Ge films with good crystallinity were prepared by a low-temperature solid phase crystallization (SPC) method for application to multilayer a-Si/poly-Ge structures. Using a-Ge:H films prepared at just below the thermal decomposition temperature o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c324f18590e37bb8af4eeb0f11a7a5f
https://doi.org/10.1143/jjap.36.262
https://doi.org/10.1143/jjap.36.262