Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hisao Asakura"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:104-110
A new test structure for the detection and localization of short and open defects in large-scale integrated intralayer wiring processes is proposed. In the structure, an open-monitoring element in the first metal layer meanders around lines of short-
Publikováno v:
Applied Surface Science. 50:233-236
The dependence of photoluminescence (PL) spectra at 2 K on the substrate orientation is reported for GaAs grown by molecular beam epitaxy (MBE). Samples investigated are GaAs grown on ( n 11)A- and ( n 11)B-oriented substrates where n is 2, 3, 5 and
Publikováno v:
International Conference on Microelectronic Test Structures, 2003..
A new test structure for the detection and localization of short and open defects in LSI intra-layer wiring processes is proposed. In the structure, an open-monitoring element (OME) in the first metal layer meanders around lines of short-monitoring e
Autor:
Tsutomu Iida, Shin Ichiro Uekusa, Tokue Matsumori, Hajime Shibata, Hisao Asakura, Yunosuke Makita, Akimasa Yamada, Nobukazu Ohnishi
Publikováno v:
Applied Physics Letters. 62:1527-1529
Conditions for the formation of defect‐induced bound exciton (DIBE) emissions in GaAs were investigated by molecular beam epitaxial method. Growth was made on both A‐ and B‐polarity substrates with (321), (221), and (211) orientations. For A‐
Autor:
Akimasa Yamada, Shin-ichiro Uekusa, Akira Obara, Shigeru Niki, Tsutomu Iida, Hisao Asakura, Yunosuke Makita, Shinji Kimura
Publikováno v:
MRS Proceedings. 235
Photoluminescence (PL) measurements have been carried out as a function of temperature and of excitation power on heavily magnesium (Mg) implanted ultra-pure indium phosphide (InP) with a dose concentration, [Mg], ranging from l×lO15cm-3 to 3×1020c
Autor:
Ryo Nagai, Riichiro Takemura, Norikatsu Takaura, Shinichiro Kimura, Satoru Yamada, Hisao Asakura, Hideyuki Matsuoka
Publikováno v:
Japanese Journal of Applied Physics. 43:1704
The threshold voltage offsets of paired p+-gate p-channel metal-oxide-semiconductor field effect transistors in high-density dynamic random access memory is investigated. The threshold voltage offset is shown to be mainly due to segregation of phosph